50Q2 Search Results

MG150

Abstract: MG150Q2YS40 56i2
Contextual Info: TOSHIBA 50Q2YS40 MG1 50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • Unit in mm 4-FAST-on-Tab# 110 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)

Contextual Info: T O S H IB A 50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage

50Q2

Contextual Info: TOSHIBA 50Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G1 50Q2YS40 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf = 0.5,ms Max.

Contextual Info: TO SHIBA 50Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

Contextual Info: TOSHIBA 50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

toshiba P

Abstract: 50Q2YS50
Contextual Info: TOSHIBA M G I 50Q2YS5Q TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG 50Q2YS50 HIGH P O W E R SWITCHING APPLICATIONS U nit in mm M O TO R CONTROL APPLICATIONS 4 -FA ST -O N -T A B # 110 • • H igh Input Impedance High Speed : tf=0.3,us M ax. @ Inductive Load

Contextual Info: T O S H IB A 50Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

MG*Q2YS51

Abstract: 50Q2 MG150Q MG150Q2YS51 MG150
Contextual Info: TO SHIBA 50Q2YS51 MG1 50Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode

150Q2YS50

Abstract: MG150Q2YS50
Contextual Info: T O S H IB A 50Q2YS50 MG1 50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)

Contextual Info: TOSHIBA 50Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G1 50Q2YS40 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf = 0.5,ms Max.

JW030B

Abstract: 0us0 8852c lucent dc-dc jc030 JC030C-M
Contextual Info: Data Sheet January 1997 microelectronics group Lucent Technologies Bell Labs Innovations JC030-Series Power Modules: 18 Vdc to 36 Vdc Inputs; 30 W Features • Small size: 2.40 in. x 2.28 in. x 0.50 in. ■ Low output noise ■ Constant frequency ■ Industry-standard pinout

smd diode code a6I

Abstract: A1s smd TRANSISTOR 4c7 SMD grid tie inverters circuit diagrams ATT3000 grid tie inverter schematics n993 smd transistor A1s ATT3020 ATT3042
Contextual Info: Data Sheet October 1993 -— s u A T « T — M l * Microelectronics ATT3000 Series Field-Programmable Gate Arrays -50, -70, -100, -125, and -150 MHz Features Description • High performance—up to 150 MHz toggle rates The CMOS ATT3000 Series Field-Programmable Gate

MOR01W

Contextual Info: ROYALOHM Metal Oxide Film Fixed Resistors Performance Specification Tem perature C oefficient ±350PPM /°C Short Tim e Overload Normal size: ± 1.0% + 0.05Q M ax, with no evidence o f mechanical damage. Small size: +(2.0% + 0.05i2)M ax, with no evidence o f mechanical damage.

Contextual Info: mM ITEL MH88632B Central Office Interface Circuit Preliminary Information Features ISSUE 2 • S up po rts Loop S tart and G round S tart protocols • 2-4 W ire conversion • Program m able Input Impedance, Network Balance Impedance and gains Ordering Inform ation

Contextual Info: Data Sheet April 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7121 HDLC Interface for ISDN HIFI-64 Features Description • Low-cost device for B-channel (64 kbits/s) or D-channel (16 kbits/s) data transport. TheT7121 HDLC Interface for ISDN (HIFI-64) con­

Contextual Info: Advance Data Sheet March 1996 ÉHAT&T Microelectronics JW050F, JW075F, JW100F, JW150F Power Modules: dc-dc Converters; 36 Vdc to 75 Vdc Input; 33 W to 99 W Features • Small size: 2.40 in. x 2.28 in. x 0.50 in. ■ High power density ■ High efficiency: 80% typical

wiring diagrams POWER COMMAND Hmi 211

Abstract: bR2335 equivalent J2/wiring diagrams POWER COMMAND Hmi 211
Contextual Info: SEL-421 Relay Protection and Automation System Instruction Manual User’s Guide 20130627 *PM421-01-NB* 2001–2013 by Schweitzer Engineering Laboratories, Inc. All rights reserved. All brand or product names appearing in this document are the trademark or registered trademark of their respective holders. No SEL

1 amp FET switch

Abstract: KSS oscillator LB1132AC Scans-00392 high-voltage bipolar transistor
Contextual Info: A T & T MELEC I C ESE D • G0S0D2b 00D27bl 1 ■ SWITCHED-MODE PULSE-WIDTH MODULATOR LB1132AC T\53-//~3) Description The LB1132AC Switched-Mode Pulse-Width Modulator (PWM) features a single-ended output which can either sink or source currents up to 200 mA. Consisting of eight functional blocks, the device is suitable for performing the basic

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

Snubber circuit Design

Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
Contextual Info: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very

Contextual Info: Advance Data Sheet March 1997 microelectronics group Lucent Technologies Bell Labs Innovations L8576 Dual Subscriber Line Interface Circuit SLIC Features Description • Distortion-free, on-hook transmission The L8576 electronic dual subscriber line interface

100 K ohm Trimmer Trim Pot Variable Resistor

Abstract: 100T0002 silver conductive ink resins 10K0H 00t0011 prob sensor moisture
Contextual Info: Until that far-off time when electronic circuits are perfect, you'll need to include variable resistors in your designs. D uring each o f the next 12 m onths. Bourns and EDN w ill bring you easy-to-read excerpts from o u r popular "Trim m er P rim e r" series. For m any o f you, the Trim mer ABG Program w ill be a refresher course; fo r

S-311-P-4/08G08P1

Abstract: c 9050 6001
Contextual Info: MCC New Concepts in Capacitors m M ATSUO since 1949 WET TANTALUM CAPACITORS FenixBSERIES Type 311 TANTAC Excellent stability & high reliability OF.,1 i*5r tim b e r’ - TAN TA C ® 311 i ± ^ y ^ M m (D S jz m m ^ y ^ y v -z :to TANTAC ® Type 311 is a G lass-to-Tantalum

5082-0200

Contextual Info: Part No. 83 84 83 84 83 84 83 84 83 84 83 84 83 84 83 84 63 84 63 84 83 64 83 84 98 100 98 100 98 100 98 100 98 100 98 100 98 100 98 100 98 100 98 100 98 100 98 100 107 107 107 107 107 107 107 107 103 103 103 103 103 104 104 104 104 82 82 82 82 B2 62 82 62