MG150Q Search Results

MG150Q2YS40

Abstract: CV200
Contextual Info: MG150Q2YS40 U nit in mm HIGH POW ER SW ITCHING APPLICATION S. « FAST on T»b# 110 M OTOR CO N TR O L APPLICATION S. • • • • • • High Input Impedance High Speed tf=0.5//s M ax. trr = 0.5/iS(Max.) Low Saturation Voltage : v CE(sat) = 4.0V (Max.)

MG150Q2YK1

Contextual Info: MG150Q2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.

transistor jc 817

Abstract: MG150q2yk1 470G jc 817
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150Q2YK1 TENTATIVE DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm fi-FAST-ON-TAB t 1 1 0 FEATURES: \ JAPAN » 3~M5 P_ 0 & 5 ÌIO .3 . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling

MG150

Abstract: MG150Q2YS40 56i2
Contextual Info: TOSHIBA MG150Q2YS40 MG1 50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • Unit in mm 4-FAST-on-Tab# 110 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)

MG150Q2YS40

Contextual Info: MG150Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode

Contextual Info: MG150Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max)

TOSHIBA IGBT

Abstract: MG150Q2YS65H PC890
Contextual Info: MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Unit: mm • High input impedance • Enhancement-mode • The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2

IGBT MG150Q2YS50

Abstract: MG150Q2YS50
Contextual Info: MG150Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max)

MG150Q1JS44

Abstract: 1S1885 diode MG150Q1JS
Contextual Info: MG150Q1JS44 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q1JS44 Unit in mm High Power Switching Applications Chopper Applications • High input impedance · High speed: tf = 0.4µs max. · Low saturation voltage · Enhancement−mode · The electrodes are isolated from case.

Contextual Info: T O SH IB A MG150Q2YS51 Mfii i ; n f » 9 v « i TOSHIBA GTR MODULE •« ■ SILICON N CHANNEL IGBT ■ agr ■ mm ht ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

DIODE JS.4

Contextual Info: T O SH IB A MG150Q1JS40 TOSHIBA GTR MODULE m SILICON N CHANNEL IGBT <;i t r i m K d n HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .5 ^ s Max. trr = 0.5/iis (Max.) • Low Saturation Voltage • V c E (sa t) = 4*0V (Max.)

MG150Q2YS1

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG150Q2YS1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. M b : ^ • High Input Impedance • High Speed: 4-FAST-ON-TAB *110 a \^\ t £=0. 5jUs Max. trr=0.5ys(Max.) • Low Saturation Voltage: V CE (sat y =4.0V(Max.)

MG150Q2YS51

Contextual Info: MG150Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max)

Contextual Info: T O S H IB A MG150Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage

Contextual Info: T O S H IB A MG150Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150Q1JS40 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf= 0.5/*s Max. trr=0.5,MS (Max.) • Low Saturation Voltage

50Q2

Contextual Info: TOSHIBA MG150Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G1 50Q2YS40 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf = 0.5,ms Max.

Contextual Info: TO SHIBA MG150Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

MG150Q2YS40

Contextual Info: MG150Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode

MG150Q1JS

Contextual Info: TOSHIBA MG150Q1JS40 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT MG1 5 0 Q 1 J S 4 0 HIGH PO W E R SW ITCHING APPLICATIONS. C HO PPER APPLICATIONS. • H igh In p u t Im pedance • H igh Speed : t f = 0 .5 /; s M ax. trr = 0.5/^s (Max.) • Low Satu ration V oltage

Contextual Info: MG150Q1JS40 HIGH P O W E R SW ITC H IN G A PPLIC A TIO N S. U n it in m m C H O PPER A PPLIC A TIO N S. H igh In p u t Im pedance H igh Speed : tf= 0 .5 ,u s M ax. t rr = 0 .5 / î s (M ax.) Low S a tu ra tio n V oltage ; v C E (sa t) = 4 ° v (M ax.) E nhancem ent-M ode

Contextual Info: TOSHIBA MG150Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

150Q2YS51

Contextual Info: TOSHIBA MG150Q2YS51 T O S H IB A G T R M O D U L E S IL IC O N N C H A N N E L IG B T M G 150Q2YS51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S High Input Impedance H ighspeed : tf=0.3^/s M ax. @Inductive Load

Contextual Info: T O S H IB A MG150Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150Q1JS40 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf= 0.5/*s Max. trr=0.5,MS (Max.) • Low Saturation Voltage

Contextual Info: T O S H IB A MG150Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)