TVR4N Search Results
TVR4N Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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TVR4N | Changzhou Galaxy Electrical | Rectifier Diode: Standard Recovery Rectifier: Single: 1000V: DO-15: 2-Pin | Original | 51.91KB | 2 | ||
TVR4N |
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TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery) | Original | 119.66KB | 3 | ||
TVR4N |
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Silicon Rectifier | Original | 124.84KB | 3 | ||
TVR4N | Unknown | The Diode Data Book with Package Outlines 1993 | Scan | 88.05KB | 2 | ||
TVR4N | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 38.29KB | 1 | ||
TVR4N |
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Integrated Circuits for TV Systems | Scan | 19.99KB | 1 |
TVR4N Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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B05G
Abstract: U15B U15C U1BC44 U1CL49 U1DL44A U1DL49 U1DZ41 U1GC44 U1GU44
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OCR Scan |
U1BC44 MBZ41 U1CL49 --18--j E1233 B05G U15B U15C U1CL49 U1DL44A U1DL49 U1DZ41 U1GC44 U1GU44 | |
U1DL49
Abstract: U15B U15C U1BC44 U1CL49 U1DL44A U1DZ41 U1GC44 U1GU44 U1GZ41
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OCR Scan |
U1BC44 MBZ41 U1CL49 26MIN 26M1N 28MIN 26MIN 29MIN 29MIN U1DL49 U15B U15C U1CL49 U1DL44A U1DZ41 U1GC44 U1GU44 U1GZ41 | |
DO-15Contextual Info: TVR4J-TVR4N Fast Recovery Rectifiers VOLTAGE RANGE: 600 -1000 V CURRENT: 1.5 A Features DO - 15 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents |
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DO-15 STD-202 | |
Contextual Info: TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High-Speed Rectifier Applications fast recovery • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 s |
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RR1000Contextual Info: BL GALAXY ELECTRICAL FAST RECOVERY RECT IFIER TVR4J-TVR4N VOLTAGE RANGE: 600 -1000 V CURRENT: 1.5 A FEATURES DO - 15 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol |
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DO-15 STD-202 BASEFOR50/100 RR1000 | |
Contextual Info: TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J, TVR4N High Speed Rectifier Applications fast recovery • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 µs |
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Contextual Info: TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications fast recovery • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 µs |
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Contextual Info: TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications fast recovery • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V · Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) · Reverse Recovery Time: trr = 20 µs |
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TVR4N diodeContextual Info: TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High-Speed Rectifier Applications fast recovery • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 s |
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TVR4N diode
Abstract: TVR4J VR4J Toshiba rectifier TVR4N
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000707EAA1 TVR4N diode TVR4J VR4J Toshiba rectifier TVR4N | |
Contextual Info: TOSHIBA TVR4J,TVR4N TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR4J, TVR4N Unit in mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • • • Repetitive Peak Reverse Voltage : V r r m = 600, 1000 V Average Forward Current : If (AV) = 1.2 A (Ta = 55°C) |
OCR Scan |
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TVR4N
Abstract: TVR4N equivalent
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DO-15 DO-15, TVR4N TVR4N equivalent | |
Contextual Info: SIYU R TVR4J / TVR4N 塑封普通整流二极管 General Purpose Plastic Rectifier 反向电压 600 - 1000 V 正向电流1.2 A Reverse Voltage 600 to 1000V Forward Current 1.2A 特征 Features DO-15 ・低的反向漏电流 Low reverse leakage 1.0 25.4 |
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DO-15 | |
Contextual Info: BL GALAXY ELECTRICAL FAST RECOVERY RECT IFIER TVR4J-TVR4N VOLTAGE RANGE: 600 -1000 V CURRENT: 1.5 A FEATURES DO - 15 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol |
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DO-15 STD-202 BASEFOR50/100 | |
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Contextual Info: SIYU R TVR4J / TVR4N General Purpose Plastic Rectifier 塑封普通整流二极管 反向电压 600 - 1000 V 正向电流1.2 A Reverse Voltage 600 to 1000V Forward Current 1.2A 特征 Features DO-15 •低的反向漏电流 Low reverse leakage 1.0 25.4 MIN |
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DO-15 25ambient | |
tvr4j
Abstract: 4j diode
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Contextual Info: TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High-Speed Rectifier Applications fast recovery • Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 µs |
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TVR4N XContextual Info: TVR4J/N SILICON DIFFUSED TYPE FAST RECOVERY DIODES PRV : 600 - 1000 Volts Io : 1.2 Amperes D2 FEATURES : * * * * * * 0.161 4.1 0.154 (3.9) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop |
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UL94V-O MIL-STD-202, TVR4N X | |
1ZB36
Abstract: 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ
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OCR Scan |
15J4B42 160G2G43 160L2G43 160Q2G43 160U2G43 160DL2C41A 16FL2C41A 16DL2CZ47A 16FL2CZ47A 1B4B41 1ZB36 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ | |
VR4J
Abstract: TVR4J
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OCR Scan |
30x30m 20x20m VR4J TVR4J | |
6B4B41
Abstract: 1J4B41 1B4B41 6J4B41 6G4B41 1G4B41 4b4b41 4G4B41 10G4B41 15B4B42
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OCR Scan |
DO-41 DO-15 D041SS 6B4B41 1J4B41 1B4B41 6J4B41 6G4B41 1G4B41 4b4b41 4G4B41 10G4B41 15B4B42 | |
zener diode 1NU 9F
Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
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BCE0001A BCE0001B zener diode 1NU 9F diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5 | |
1N4007 melf
Abstract: diode 1n4007 melf smd m4 smd 1N4004 M7 DO-214AC 1N4007 DO-214AC do-214ac M1 m4 smd 1N5401 1N4007 equivalent components of diode her207 1N4004 DO-214AA
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1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 BA157 BA158 BA159 1N4007 melf diode 1n4007 melf smd m4 smd 1N4004 M7 DO-214AC 1N4007 DO-214AC do-214ac M1 m4 smd 1N5401 1N4007 equivalent components of diode her207 1N4004 DO-214AA | |
TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
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OCR Scan |
015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P |