VR4J Search Results

Contextual Info: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J,TVR4N High-Speed Rectifier Applications fast recovery • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 s

VR4J

Abstract: TVR4J
Contextual Info: SILICON DIFFUSED TYPE FAST RECOVERY DIODE VR4J/N HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • Repetitive Peak Reverse Voltage : Vr rm = 600, 1000V • Average Forward Current : IF(AV) =1.2A(Ta = 55°C) • Reverse Recovery Time : trr=20/^s U nit in mm

Contextual Info: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J, TVR4N High Speed Rectifier Applications fast recovery • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 µs

Contextual Info: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J,TVR4N High Speed Rectifier Applications fast recovery • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 µs

Contextual Info: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J,TVR4N High Speed Rectifier Applications fast recovery • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V · Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) · Reverse Recovery Time: trr = 20 µs

TVR4N diode

Contextual Info: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J,TVR4N High-Speed Rectifier Applications fast recovery • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 s

TVR4N diode

Abstract: TVR4J VR4J Toshiba rectifier TVR4N
Contextual Info: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J, TVR4N High Speed Rectifier Applications fast recovery • Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 µs

Contextual Info: TOSHIBA VR4J,TVR4N TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE VR4J, TVR4N Unit in mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • • • Repetitive Peak Reverse Voltage : V r r m = 600, 1000 V Average Forward Current : If (AV) = 1.2 A (Ta = 55°C)

Contextual Info: T O SH IB A VR4J,TVR4N TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE VR4J, TVR4N HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • • • Unit in mm Repetitive Peak Reverse Voltage : Vrrm = 600, 1000V Average Forward Current : Ip(AV) = 1-2A (Ta = 55°C)

tvr4j

Abstract: 4j diode
Contextual Info: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J,TVR4N High-Speed Rectifier Applications fast recovery • Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 µs

TVR4N X

Abstract: TVR4J TOSHIBA RECTIFIER
Contextual Info: T O SH IB A VR4JJVR4N TOSHIBA FAST RECOVERY DIODE TX/Rdl SILICON DIFFUSED TYPE TX/RAN HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY U nit in mm • Repetitive Peak Reverse Voltage : V r r ]V[ = 600, 1000V • Average Forward C urrent : I f (AV) —1-2A (Ta = 55°C)

Contextual Info: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J,TVR4N High-Speed Rectifier Applications fast recovery • Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 µs