U3055L Search Results

SSR -25 DD

Abstract: SSR -100 DD MOSFET SSR
Contextual Info: SSR/U3055LA Logic-Level Gate Drive Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA Max. @ VDS = 60V ■ Lower Rds(on) : 0.124 n (Typ.)

MOSFET SSR

Contextual Info: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

Contextual Info: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

SSR -100 DD

Contextual Info: SSR/U3055LA 60 V ^ D S o n = 0 .1 • Logic-Level Gate Drive ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current :10|iA (M ax.) @ VDS = 60V

U3055L

Abstract: logic level mosfet SSR3055L cc1k SSU3055L 824 mosfet diode 824
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET SSR3055L/U3055L FEATURES • • • • • • • D-PAK Lower R ds ON Excellent voltage stability Fast switching sp eed s Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

SSR -100 DD

Abstract: 01TAGE
Contextual Info: Advanced SSR/U3055LA P o w e r MOSFET FEATURES B V DSS — 6 0 V • Logic-Level G ate Drive ■ A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea

Contextual Info: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

300f diode

Abstract: mosfet DPAK U3055L SSR3055L
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET SSR3055L/U3055L FEATURES D-PAK • L o w e r R d s ON • • • • • • • Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: SSR/U3055LA Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance o ■ ^ D S o n = II Avalanche Rugged Technology ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage ■ Lower RDS(ON) : 00 ■ 0.1

ka7745

Abstract: EI-1614 xenon light source circuit diagram igbt xenon tube IC-276 3V to 300V dc dc converter xenon lamp design SGR20N40L SCR TRIGGER PULSE TRANSFORMER xenon strobe lamp
Contextual Info: AN9006 IGBT Application Note For Camera Strobe Camera Strobe System Summary The Camera Strobe System Portable & DSC is a lighting system for taking pictures in relatively dark areas, without the accompanying negative effect on picture quality. The strobe system is

ka7745

Abstract: 3V to 300V dc dc converter xenon light source circuit diagram EI-1614 igbt xenon tube control light intensity using SCR AN9006 EI 33 transformer SCR TRIGGER PULSE TRANSFORMER SGR20N40L
Contextual Info: July, 2000 AN9006 IGBT Application Note For Camera Strobe Camera Strobe System Summary The Camera Strobe System Portable & DSC is a lighting system for taking pictures in relatively dark areas, without the accompanying negative effect on picture quality. The strobe system is