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GT30F121 Datasheets (1)

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Toshiba

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
GT30F121		Toshiba	Discrete IGBTs	Original	PDF	539.84KB	16

GT30F121 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GT30F121 Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101 Contextual Info: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications	Original	bce0010a gt30f121 gt30g121 gt30g131 +7mg30t1al1 gt30*122 gt45f12 mg60m1al1 gt30f gt60m301 gt60m101	PDF

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GT30F121

Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
Contextual Info: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications

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bce0010a gt30f121 gt30g121 gt30g131 +7

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