GT30J324 Search Results
GT30J324 Datasheets (6)
Toshiba
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| GT30J324 |
|
Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Original | 168.33KB | 7 | ||
| GT30J324 |
|
High-Speed IGBTs | Original | 117.47KB | 8 | ||
| GT30J324 |
|
IGBT Chip, N Channel, 600V, 2-16C1C, 3-Pin | Original | 331.28KB | 7 | ||
| GT30J324 |
|
Discrete IGBTs | Original | 539.84KB | 16 | ||
| GT30J324(Q) |
|
IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 30A 170W TO3PN | Original | 7 | |||
| GT30J324Q |
|
TRANS IGBT CHIP N-CH 600V 30A 3(2-16C1C) | Original | 212.74KB | 7 |
GT30J324 Price and Stock
Toshiba America Electronic Components
Toshiba America Electronic Components GT30J3242 devices, VCES=600V, IC=30A - Rail/Tube (Alt: GT30J324) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT30J324 | Tube | 50 |
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GT30J324 | 490 |
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GT30J324 | 2,402 |
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