GT5J321 Search Results
GT5J321 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| GT5J321 | Toshiba | High Power Switching Applications | Original | 161.09KB | 6 | ||
| GT5J321 | Toshiba | High-Speed IGBTs | Original | 117.47KB | 8 |
GT5J321 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
GT5J321Contextual Info: TOSHIBA Preliminary GT5J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT5J321 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS :Operating frequency up to 150kHz(Reference) |
Original |
gt5j321150khztj125 | |
STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
|
Original |
2002-sepstr-g6551str-f6654g6551+7 | |
GT15J301
Abstract: gt10j321 GT15J321 GT20J321 GT30J121 GT30J324 GT50J121 GT50J325 GT5J121 GT5J321
|
Original |
gt15j301gt10j321gt15j321gt20j321+6 | |
2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
|
Original |
sc-63/64sc-62sc-59ot-23+16 |