TK18 Search Results

Contextual Info: GEC P L E S S E Y Si O C T O B E R 1995 S E M I C O N D U C T O R S DS4253-3.2 TK18 PHASE CONTROL THYRISTOR KEY PARAM ETERS V„„„ 1200V ' DRM 115A T AV 2000A "TSM 200V/|iS dVdt* dl/dt 500A/|is APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies.

Contextual Info: TK18 M ITEL Phase Control Thyristor SEMICONDUCTOR Supersedes O ctober 1995 version, DS4253 - 3.2 DS4253 - 3.3 APPLICATIONS • High Pow er Drives. ■ High V oltage Pow er Supplies. ■ DC M otor C ontrol. ■ W elding. ■ Battery C hargers. March 1998

Contextual Info: TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK18A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)

K18A50D

Abstract: TK18A50D k18a50
Contextual Info: TK18A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK18A50D スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.23 Ω (標準) オン抵抗が低い。 : |Yfs| = 8.5 S (標準) 順方向伝達アドミタンスが高い。

Contextual Info: TK18E10K3 MOSFET シリコンNチャネルMOS形 U-MOS TK18E10K3 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 33 mΩ (標準) (2) 順方向伝達アドミタンスが高い。: |Yfs| = 28 S (標準)

ENCLOSURE TS

Abstract: m12x1.5 seal enclosure 100-M12N TK77 262412 NJ08
Contextual Info: Accessories Hinge Kits For Series Cat. No. HK1 HK2 TGISS HK-AL TK77 - 1809, EK002 TK1811 - 3625, EK004 - 024, AK, AKL TGxx12 and TG2015-TG3023 AL1212 - AL3323 190-002 190-005 182-001 154-210 Replacements for existing screws. Type For Series Cat. No. Short-Gray

TK18

Contextual Info: TK18 TK18 Phase Control Thyristor Advance Information Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001 FEATURES KEY PARAMETERS • High Surge Capability VDRM 1200V IT AV 115A ITSM 2000A dVdt* 200V/µs dI/dt 500A/µs APPLICATIONS ■ High Power Drives

TK18

Abstract: 27af
Contextual Info: TK18 TK18 Phase Control Thyristor Advance Information Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001 FEATURES KEY PARAMETERS • High Surge Capability VDRM 1200V IT AV 115A ITSM 2000A dVdt* 200V/µs ■ DC Motor Control dI/dt 500A/µs ■ Welding

Contextual Info: TK18E10K3 MOSFETs Silicon N-channel MOS U-MOS TK18E10K3 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer admittance: |Yfs| = 28 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

TK18

Abstract: ON SEMICONDUCTOR 613 AN4839 DYNEx
Contextual Info: TK18 TK18 Phase Control Thyristor Advance Information Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001 FEATURES KEY PARAMETERS • High Surge Capability VDRM 1200V IT AV 115A ITSM 2000A dVdt* 200V/µs dI/dt 500A/µs APPLICATIONS ■ High Power Drives

Contextual Info: TK18A30D MOSFETs Silicon N-Channel MOS π-MOS TK18A30D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

T0-94

Contextual Info: TK18 M ITEL Phase Control Thyristor SEMICONDUCTOR Supersedes O ctober 1995 version, DS4253 - 3.2 DS4253 - 3.3 APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS V DRM _. 1200V 115A Jt AV 2000A TSM

Contextual Info: TK18A30D MOSFET シリコンNチャネルMOS形 π-MOS TK18A30D 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 0.1 Ω (標準) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 300 V)

Contextual Info: TK18A30D MOSFETs Silicon N-Channel MOS π-MOS TK18A30D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

Contextual Info: TK18E10K3 MOSFETs Silicon N-channel MOS U-MOS TK18E10K3 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer admittance: |Yfs| = 28 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

K18a50d

Abstract: k18a50 TK18A50D K*A50D K18A
Contextual Info: TK18A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK18A50D 単位: mm スイッチングレギュレータ用 : RDS (ON) = 0.22 Ω (標準) オン抵抗が低い。 : |Yfs| = 8.5 S (標準) 順方向伝達アドミタンスが高い。

Contextual Info: TK18A30D MOSFETs Silicon N-Channel MOS π-MOS TK18A30D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

TK18

Contextual Info: TK18 TK18 Phase Control Thyristor Advance Information Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001 FEATURES KEY PARAMETERS • High Surge Capability VDRM 1200V IT AV 115A ITSM 2000A dVdt* 200V/µs dI/dt 500A/µs APPLICATIONS ■ High Power Drives

K18a50d

Abstract: k18a50 TK18A50D Silicon N Channel MOS Type Switching Regulator
Contextual Info: TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK18A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.23 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)

Contextual Info: TK18E10K3 MOSFETs Silicon N-channel MOS U-MOS TK18E10K3 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) High forward transfer admittance: |Yfs| = 28 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

k18a50

Contextual Info: TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK18A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.22 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)

K18a50d

Abstract: k18a50 TK18A50D K18A
Contextual Info: TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK18A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)

TK1836

Abstract: ILA1519B1Q TDA8842 INA84C641NS-168 tk1838 ina84c640ans-030 u3843 cx20106 CX20106A INA84C641NS-068
Contextual Info: ИНТЕГРАЛЬНЫЕ МИКРОСХЕМЫ Бытовая электроника •ИМС для телевидения Функциональное Основные характеристики назначение Интегральные микросхемы для пульта дистанционного управления

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4