ICC10 Search Results

Ks-7b

Contextual Info: TMS417800, TMS417800P 2 097152 WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M K S 7 8 0 -D E C E M B E R 1992 x 8 DE P AC K A G E t DZ P A C K AG E t TOP VIEW (TOP VIEW) * Performance Ranges: vcc[ 1o D Q 0[ 2 ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE

Contextual Info: 2ch Digital isolator Isolation voltage 2500 Vrms High Speed Isolator BM67220FV-C ●Description The BM67220FV-C is a high-speed isolator IC used in electric vehicles and hybrid vehicles. This IC features dielectric strength of 2500 Vrms between I/O and the

ICC1-100

Abstract: ICC150
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 02. Inactivate device type 01 (no approved source of supply). Add device types 03 through 07. Add vendors CAGE 32116, 5Y243, 57363, and 88379. Changed to reflect MIL-H-38534 processing. Editorial changes throughout.

HB56A140BR

Contextual Info: HB56A140BR Series 1,048,576-word x 40-bit High Density Dynamic RAM Module The HB56A140BR is a 1M × 40 dynamic RAM module, mounted 10 pieces of 4-Mbit DRAM HM514400BS/BLS/CS/CLS sealed in SOJ package. An outline of the HB56A140BR is 72pin single in-line package. Therefore, the

MSM51V16165D

Abstract: MSM51V16165DSL SOJ42-P-400-1
Contextual Info: Pr E2G0132-17-61 el im y 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16165D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The MSM51V16165D/DSL achieves high integration, high-speed operation,

MSM51V17805D

Abstract: MSM51V17805 MSM51V17805DSL
Contextual Info: Pr E2G0129-17-61 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17805D/DSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805D/DSL achieves high integration, high-speed operation,

MSM51V17800

Abstract: MSM51V17800DSL
Contextual Info: Pr E2G0127-17-61 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800D/DSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17800D/DSL achieves high integration, high-speed operation,

msm51v17400d

Abstract: MSM51V17400 MSM51V17400DSL
Contextual Info: Pr E2G0123-17-61 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400D/DSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17400D/DSL achieves high integration, high-speed operation,

MSM514900CSL

Contextual Info: E2G0025-17-42 ¡ Semiconductor MSM514900C/CSL ¡ Semiconductor This MSM514900C/CSL version: Jan. 1998 Previous version: May 1997 524,288-Word ¥ 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900C/CSL is a 524,288-word ¥ 9-bit dynamic RAM fabricated in Oki's silicon-gate

NHI-1582ETGW

Abstract: NHI-1582ETGW/883 GAP01 super avr manual ET 8211 NHI-1582ET stanag 4444 STD-1553A A5690 mil bus
Contextual Info: NATIONAL HYBRID, Inc. Multi Protocol Data Bus Interface NHi-ET Enhanced Terminals Bus Controller, Remote Terminal, Bus Monitor User's Manual Version 2000.11.29 November 2000 The information provided in this document is believed to be accurate; however, no responsibility is assumed by NATIONAL

MSM514256C

Abstract: DIP20-P-300-2 MSM514256CL
Contextual Info: E2G0010-17-41 ¡ Semiconductor MSM514256C/CL ¡ Semiconductor This version: Jan. 1998 MSM514256C/CL Previous version: May 1997 262,144-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS

CDCLVD2104RHDR

Contextual Info: CDCLVD2104 www.ti.com SCAS903A – JUNE 2010 – REVISED AUGUST 2010 Dual 1:4 Low Additive Jitter LVDS Buffer Check for Samples: CDCLVD2104 FEATURES 1 • • • • • • • • • • • • Dual 1:4 Differential Buffer Low Additive Jitter <300 fs, RMS in

MT28F008B3

Abstract: MT28F800B3
Contextual Info: 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks

MSM51V16800BSL

Contextual Info: ¡ Semiconductor MSM51V16800B/BSL ¡ Semiconductor MSM51V16800B/BSL E2G0074-17-41 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800B/BSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16800B/BSL achieves high integration, high-speed operation, and

MT28F002B3

Abstract: MT28F200B3
Contextual Info: 2Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002B3 MT28F200B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks

LB1981V

Abstract: SSOP30 LB1981
Contextual Info: Ordering number : ENN5917 LB1981V Monolithic Digital IC LB1981V Three-Phase Brushless Motor Driver Overview Package Dimensions The LB1981V is a three-phase brushless motor driver especially suited for use mainly with drum motors of portable VCRs. unit: mm

Contextual Info: Commercial INC. PEEL 16V8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Features • Compatible with Popular 16V8 Devices — 16V8 socket and function compatible — Programs with standard 16V8 JEDEC file — 20-pin DIP, SOIC, and PLCC packages

SOJ42-P-400-1

Abstract: MSM51V18165DSL
Contextual Info: Pr E2G0133-17-61 im el y 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The MSM51V18165D/DSL achieves high integration, high-speed operation,

msm51v17800b

Abstract: MSM51V17800 SOJ28 bsl 100
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

msm514800e

Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

micron memory sram

Abstract: micron sram MT28C3214P2FL MT28C3214P2NFL FW431
Contextual Info: 2 MEG x 16 PAGE FLASH 256K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3214P2FL MT28C3214P2NFL Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture • Support for true concurrent operations with no

MSM518128

Abstract: MSM518128L
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

CA10

Abstract: ZIP20
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: HB56UW472EJNB Series, HB56UW464EJNB Series 4.194.304-word x 72-bit High Density Dynamic RAM Module 4.194.304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-723B Z Rev.2.0 Jun. 12, 1997 Description The HB56UW472EJNB, HB56UW464EJNB belong to 8 Byte DIMM (Dual In-line Memory Module)