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    TK18A30D Search Results

    TK18A30D Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TK18A30D
    Toshiba Transistors - Mosfets Original PDF 228.07KB 9
    TK18A30D
    Toshiba Japanese - Transistors - Mosfets Original PDF 337.87KB 9
    TK18A30D,S5X
    Toshiba Semiconductor and Storage PB-F POWER MOSFET TRANSISTOR TO- Original PDF 229.28KB 9
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    TK18A30D Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK18A30D,S5X

    MOSFET N-Channel Enhancement Mode 300V 3-Pin TO-220SIS - Rail/Tube (Alt: TK18A30D,S5X)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK18A30D,S5X Tube 16 Weeks 50
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    • 100 $0.89
    • 1000 $0.72
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    Toshiba America Electronic Components TK18A30D,S5X(M

    Halbleiterbauelement, Transistor, Pwr-Mo; |Toshiba TK18A30D, S5X(M
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    Newark TK18A30D,S5X(M Bulk 1
    • 1 $1.45
    • 10 $1.45
    • 100 $0.89
    • 1000 $0.71
    • 10000 $0.71
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    TME TK18A30D,S5X(M 1
    • 1 $1.72
    • 10 $1.38
    • 100 $1.24
    • 1000 $1.24
    • 10000 $1.24
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    EBV Elektronik TK18A30D,S5X(M 19 Weeks 50
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    TK18A30D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TK18A30D MOSFETs Silicon N-Channel MOS π-MOS TK18A30D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original
    tk18a30do-220sis PDF

    Contextual Info: TK18A30D MOSFET シリコンNチャネルMOS形 π-MOS TK18A30D 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 0.1 Ω (標準) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 300 V)


    Original
    tk18a30do-220sis PDF

    Contextual Info: TK18A30D MOSFETs Silicon N-Channel MOS π-MOS TK18A30D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original
    tk18a30do-220sis PDF

    Contextual Info: TK18A30D MOSFETs Silicon N-Channel MOS π-MOS TK18A30D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original
    tk18a30do-220sis PDF

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Contextual Info: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original
    bce0082htoshiba laptop charging circuit diagramtpc8123tph1400anh+6tpca8047-htpc 8127tpc8123 cross referencessm3j328rssm3j334rtpc8120 PDF

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original
    tk12a10k3tk12a10ktk33a60vtpca*8065+6tk40e10k3ssm6k407tutpca*8064tk6a65d equivalenttpca*8036tk100g10n1 PDF