DIODE GP 538 Search Results

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

potentiometer 1k ohm

Abstract: L2 diode ultrarf ATC100 MMBTA64 MRF19060 UPF19060 Z8 SOT23 diode zener Z11 0603 440117
Contextual Info: UPF19060 60W, 2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS and PCN base station applications in the frequency band 1.9 to 2.0 GHz. Ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation.

CP3121

Abstract: L3000N LCP3121 SMBYW01-200 TL 431 SO8 diode gp 538 STMicroelectronics DIODE marking code GP
Contextual Info: LCP3121 Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE FEATURES AND BENEFITS UNIDIRECTIONAL OVERVOLTAGE SUPPRESSOR PROGRAMMABLE BY VOLTAGE AND CURRENT: PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. PROGRAMMABLE CURRENT LIMITATION

gp 431

Abstract: CP3121 LCP3121 1/Diode gp 431 STMicroelectronics SO8 431 L3000N SMBYW01-200 GP SERIES RESISTORS a gn 137
Contextual Info: LCP3121  Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE FEATURES AND BENEFITS UNIDIRECTIONAL OVERVOLTAGE SUPPRESSOR PROGRAMMABLE BY VOLTAGE AND CURRENT: PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. PROGRAMMABLE CURRENT LIMITATION

CP3121

Abstract: LCP3121 SMBYW01-200 GP 015 DIODE 2.5kV ZENER DIODE
Contextual Info: LCP3121  Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE FEATURES AND BENEFITS UNIDIRECTIONAL OVERVOLTAGE SUPPRESSOR PROGRAMMABLE BY VOLTAGE AND CURRENT: PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. PROGRAMMABLE CURRENT LIMITATION

GP 048 DIODE

Abstract: STMicroelectronics SO8 431 CP3121 2.5kV ZENER DIODE diode gp 538 TR-NWT-000974 358 marking stmicroelectronics LCP3121 SMBYW01-200 L3000N
Contextual Info: LCP3121 Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE FEATURES AND BENEFITS UNIDIRECTIONAL OVERVOLTAGE SUPPRESSOR PROGRAMMABLE BY VOLTAGE AND CURRENT: PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. PROGRAMMABLE CURRENT LIMITATION

Contextual Info: LCP3121  Application Specific Discretes A.S.D.TM UNIDIRECTIONAL TRANSIENT SUPPRESSOR PROGRAMMED BY VOLTAGE & CURRENT FEATURES AND BENEFITS UNIDIRECTIONAL OVERVOLTAGE SUPPRESSOR PROGRAMMED BY VOLTAGE AND CURRENT: CROWBAR OCCURS AT THE DESIRED LEVEL. MULTI-LINE PROTECTION MODE : ONE DEVICE CAN PROTECT SEVERAL LINES,

TR MARKING Z7

Contextual Info: SGS-THOMSON LCP3121 •m Application Specific Discretes TM A.S.D. UNIDIRECTIONALTRANSIENT SUPPRESSOR PROGRAMMED BY VOLTAGE & CURRENT FEATURES AND BENEFITS ■ UNIDIRECTIONAL OVERVOLTAGE SUP­ PRESSOR PROGRAMMED BY VOLTAGEAND CURRENT: CROWBAR OCCURS AT THE DE­

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: LCP3121 Application Specific Discretes A.S.D. O VERVO LTAG E AND O VERCURRENT PROTECTION FOR TELECOM LINE FEATURES AND BENEFITS • UNIDIRECTIONAL OVERVOLTAGE SUP­ PRESSOR PROGRAMMABLE BY VOLTAGE AND CURRENT: ■ PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V.

Contextual Info: SGS-THOMSON LCP3121 ;y Application Specific Discretes A.S.D. O VERVO LTAG E AND O VERCURRENT PROTECTION FOR TELECOM LINE FEATURES AND BENEFITS • UNIDIRECTIONAL OVERVOLTAGE SUP­ PRESSOR PROGRAMMABLE BY VOLTAGE AND CURRENT!-: ■ PROGRAMMABLE BREAKDOWN VOLTAGE

C02D

Contextual Info: SIEMENS BUZ 74 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 74 A Vbs 500 V h 2.1 A ^DSton 40 Package Ordering Code TO-220 AB C67078-S1314-A3 Maximum Ratings Parameter Symbol Continuous drain current Values b

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

tda8362b

Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
Contextual Info: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

TLE7201

Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
Contextual Info: Automotive Power Selection Guide Ultimate POWER – Perfect Control CO M P L E T E A u t o m o t i v e S o l u t i o ns f r o m I n f i n e o n www.infineon.com/power Never stop thinking. Introduction Power and Control – a Successful Combination D O Y O U N E E D to control more power? With increasing accuracy? Do

cnc schematic

Abstract: HH1T 2SK897-MR LD2A 5388 MSA03
Contextual Info: 2SK897-MR FUJI POWER MOS-FET \I-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features «'»High speed switching • Low on-resistance i* No secondary breakdown «►Low driving power «»High voltage ■Applications »♦Switching regulators i" U PS < ■

Transistor B123

Abstract: H11S r6e2 T151 T760 b123 04 DA092
Contextual Info: 2 DI300A-050 300A POWER TRANSISTOR MODULE • ¡tfJ i: : Features • ^^iyfE High Current • h F E A ^ i' • High DC Current.Gain Insulated Type ■ f f l i i : A pplications ih W tJ Z x i v T 's ? High Power Sw itching • U ninterruptible Power Supply

H11S

Abstract: lc-300A
Contextual Info: 2 DI300A-050 300A POWER TRANSISTOR MODULE • ¡tfJ i: : Features • ^^iyfE High Current • h F E A ^ i' • High DC Current.Gain Insulated Type ■ f f l i i : A pplications ih W tJ Z x i v T 's ? High Power Sw itching • U ninterruptible Power Supply

7MBR25NF120

Abstract: AC2500 IT0-22
Contextual Info: V r N v /lJ — X j 7 M B R 2 5 N F 1 2 0 ' y * > 7 M r N' > ij - X j 1200V/25A/PIM : Features " j & 's V •flU EIER] High Speed Switching Voltage Drive •«£< Low Inductance Module Structure Converter Diode Bridge Dynamic Brake Circuit : Applications

transistor aj7

Abstract: NZM 11 400
Contextual Info: 1 1 D ' < 7 - 2 l ' 7 Z / ' ÿ 7 N - 1 2 2 A : Outline Drawings Î ï ÿ i - ; i ' POWER TRANSISTOR MODULE : Features • h F E ^ i^ i' High DC C urre n t Gain • K rt» : A p p lic a tio n s • General Purpose Inyerter > '< — 9 • U n in te rru p tib le P ow er S upply

5l 0380

Abstract: H bridge 600v 30a 7MBR30NF060 sl 0380 sl 0380 r AC2500 IT0-22
Contextual Info: ^ S d r l G B T ^ ^ i L — JU ftW ffe • a & v i - > 7 M r N '> * - r •; rN y ' J - X j 7 m b r 3 o n f o 6 o - X j 6 0 0 V /3 0 A /P IM : Features High Speed Switching •^ffiS E W Voltage Drive Low Inductance Module Structure • * - K 7 'U *yi> •

Contextual Info: ER B 43 o.5a> : O utline D raw ings FAST RECOVERY DIODE • I t A : Features ■ S High voltage by mesa design. tjv : M arking • A ftliii High reliability A 5-3-F C o lo r code G reen BS£ » £ ■ f f liis I A p p lica tio n s A b rid g e d ty p e n a m e "'