N611 Search Results

EEPROM

Abstract: eeprom serial Mali
Contextual Info: MOS Memories • EEPROM Capacity bit 512 2k lk 2k Type No. M N6310/S X 512 XI M N61113/S 2048 X I M N6311/S 2048 X 1 M N63121/S 64 X16 M N63122/S 128 X 16 MN63112/S 128 X16/ 256 X8 A M N 6 3 1 3 2 /S 4k Organization (words bits) 256 X8 A M N 63114 256 X16/

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

PAC1000

Abstract: SAM448 DALLAS 2501 PSD100 WS27c010 Waferscale Integration pac1000 IR 9515 datasheet 9435, ic BA 9706 K Microcontroller AT89C51 plcc 44 pin details
Contextual Info: Reliability Summary 1999 Waferscale Integration, Inc. Reliability Summary 1999 Copyright 1999 Waferscale Integration, Inc. All rights reserved. 47280 Kato Road, Fremont, California 94538 Tel: 510-656-5400 Fax: 510-657-5916 Web Site: http://www.waferscale.com

Contextual Info: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features • 18 Bit Bidirectional Bus Interface ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ ■ ■ ■ ■ Supports IEEE standard 1149.1-2001 Boundary Scan

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

Contextual Info: PPT2 Next Generation Precision Pressure Transducer Highly Accurate Over a Wide Temperature Range Applications Honeywell’s Next Generation Precision Pressure Transducer PPT2 combines proven silicon sensor technology with microprocessor-based signal conditioning to provide

hxlvdsr

Abstract: 5962-07A03 MIL-PRF38535 S150
Contextual Info: HXLVDSR Quad LVDS Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features • Four Independent Receivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Supply ■ Common Receiver Enable Control ■ High Impedance LVDS Inputs ■ Tristate Output Capability

MIL-PRF38535

Contextual Info: HXLVDSD Quad LVDS Differential Line Driver Radiation Hardened 3.3V SOI CMOS Features • ■ Four Independent Drivers Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Supply ■ Common Driver Enable Control ■ Tristate Outputs ■ ■ ■ ■ Temperature Range:

HX422R

Abstract: 5962-07A04
Contextual Info: HX422R Quad RS422 Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features • Four Independent Receivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Analog Supply ■ Common Receiver Enable Control ■ Tristate Outputs ■ Temperature Range: -55°C to 125°C

HMC5883L

Abstract: HMC5883 compass ic HMC5883LTR HMC5883L-TR AMR sensor
Contextual Info: HMC5883L 3-Axis Digital Compass IC Industry-leading accuracy, reliability and resolution The Honeywell HMC5883L is an ultra-small sensor designed for low-field magnetic sensing with a digital interface for applications such as low-cost compassing and magnetometry.

QFS064-P-1414

Abstract: denso N6114 ic b82 MN8605 MN6114 mn86051
Contextual Info: ICs/LSIs for Communication Equipment • For Facsimile MOS ICs Type No. Operating Voltage (V) Process Functions Package No. MN86151 5 LSI (6-bit) for shading compensation QFP044-P-1010 L50 M N86157 5 LSI (7-bit) for shading compensation QFP044-P-1010 1.50

SAM448

Abstract: pac1000 PSD100 PAC1000A BA 9515 ba 4913 WS*57c257 ws57c257 ws57c43 psi c 275 9 121
Contextual Info: Reliability Summary 1997 Copyright 1997 WaferScale Integration, Inc. All rights reserved. 47280 Kato Road, Fremont, California 94538 Tel: 510-656-5400 Facsimile: 510-657-5916 Web Site: http://www.wsipsd.com Printed in U. S. A. Return to Main Menu Table of Contents

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

N611

Abstract: DS500-P511 SICK distance sensor DS500-N511 86227 DS500 cfr 1040 P611 DS500-P611 Q235
Contextual Info: DS500 Distance sensor Dimensional drawing 69 21 3 28 48 1 145 8 2 19 105 15 110 4 Ø9 50 90 on Q2 35 Q1 ESC 90 M12 5 ENTER High measurement accuracy thanks to time of flight measurement Simple alignment using red laser light Two distance switching outputs

5962-07A06

Abstract: tms 1944 1A7-B MIL-PRF38535 S150 SN54LVTH18502A tms 1601 HXBUSX18
Contextual Info: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features • 18 Bit Bidirectional Bus Interface ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ ■ ■ ■ ■ Supports IEEE standard 1149.1-2001 Boundary Scan

5962-07A04

Abstract: HX422R smd transistor bq 22 bq 726 MIL-PRF38535 S150 honeywell defense
Contextual Info: HX422R Quad RS422 Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features • Four Independent Receivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Analog Supply ■ Common Receiver Enable Control ■ Tristate Outputs ■ Temperature Range: -55°C to 125°C

HRT6408

Abstract: HX6408 honeywell memory sram CDR33 S150 129a1
Contextual Info: HRT6408 HRT6408 512k x 8 Static RAM Radiation Tolerant Features • ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read/Write Cycle Times Typical Write = 7 ns Typical Read = 12ns ■ Asynchronous Operation ■ CMOS Compatible I/O

HMX9225

Abstract: rad analog to digital converter 14 bit
Contextual Info: HMXADC9225 Radiation Hardened 12-Bit, 20 MSPS Monolithic A/D Converter Features Monolithic 12-Bit, 20 MSPS A/D Converter n Rad Hard: >500k Rad Si Total Dose n Single +5 V Analog Supply n Complete On-Chip S/H Amplifier n Straight Binary Output Data n 5V or 3.3V Digital and I/O Supply

4464S

Abstract: 44256S MN234000 MN234001 mn4464S TSOP032-P-0815 MN234003 238000S m6m80021 MN234002
Contextual Info: MOS Memories • Static RAMs Memory M em ory Size T ype No. bit 64 K C ycle Supply C om position Tim e Tim e Voltage (W ord X bit) max. (ns) m in . (ns) (V) P ow er Consum ption max. Process Package O perating Stand-by No. 0.055 DIP028-P-0600A M il M N 4464M -08LL

UDN6118A

Abstract: UDN-6118A Vacuum Fluorescent Displays
Contextual Info: 61X6 6118 AND FLUORESCENT DISPLAY DRIVERS U D N 6 1 1 6 A /R i n rs\ | 2~J NC NC 3— 1>— q D>— — J6~] J4~| j3~ □3— D>- cy— \> - □3— D u - /? C onsisting of six or eight NPN Darlington output stages and the associated com m on-em itter input stages, these drivers are designed

hitachi transistor fn651

Abstract: fn651 thyristor Q406 C745 TRANSISTOR ST C744 c311c c744 diodes ld 33 c744 A68KSA30X TELEVISION EHT TRANSFORMERS
Contextual Info: PA HITACHI 35TX10B/CZ41 31UX5B/CY45 31CX4B/CY44 27UX5B/C745 27CX4B/C744 27CX3B/C743 SERVICE MANUAL § No. 0039 R/C: ¡A 3 L X U CLU-851GR CLU-692GR CLU-691GR CAUTION: Before servicing this chassis, it is important that the service technician read the "Safety Precautions" and "Product Safety Notices" in this Service Manual.

HXSRD01

Abstract: 10Gb trivor smd transistor M21 Lanes PRBS31 w21 transistor smd 8B10B S150 honeywell material spec microcircuit w18 smd transistor
Contextual Info: HXSRD01 Trivor SERDES Quad Redundant Transceiver Radiation Hardened Features • Fabricated on S150 Silicon On Insulator SOI CMOS ■ ■ 150 nm Process (Leff = 110 nm) 4 Channel (Quad) Transceiver with Redundant Transmitters ■ Channel Data Rates to 3.1875Gb/s

Contextual Info: HXLVDSR Quad LVDS Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features • Four Independent Receivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Supply ■ Common Receiver Enable Control ■ High Impedance LVDS Inputs ■ Tristate Output Capability