WS57C43 Search Results

WSI eprom Programming algorithm

Contextual Info: ^ALE W AFFR INTEGRATION 99D 0 0 136 DT-Í/6-/3-Z5 WS57C43B ADVANCE INFORMATION WAFER WAFERSCALE INTEGRATION, INC 4K X 8 CMOS PROM SCALE KEY FEATURES Low Power Consumption — 300 mW Active Power 20 MHz — Up to 200 mA Fast Programming • Available in 300 Mil Dip

WS57C43

Abstract: WS57C128 WS57C191 wafer equipment
Contextual Info: Document: WSI-1022 September 22, 1998 Subject: Critical Process Change Notification High Speed Memory 35ns and slower only Device Types: WS57C128, WS57C191, WS57C291, WS57C43, WS57C49, WS57C51 - This change effects speeds 35ns and slower only (-35, -45, -55, -70

Contextual Info: WS57C43C HIGH SPEED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP — t ACC = 25 ns — t CS = 12 ns — Up to 200 mA • Low Power Consumption • Fast Programming • ESD Protection Exceeds 2000 V

bipolar PROM

Contextual Info: WS57C43C MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP • Ultra-Fast Access Time — *ACC = 3 5 ns — t cs = 20 ns — Up to 200 mA • Low Power Consumption • Fast Programming

Contextual Info: WS57C43C P R E L IM IN A R Y HIGH SPEED 4K x 8 CMOS PROM/RPROM K E Y FEA TU R E S • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP • Ultra-Fast Access Time - ' a c c = 25 ns — >cs = ' 2 ns — Up to 200 mA • Low Power Consumption • ESD Protection Exceeds 2000 V

Contextual Info: PROM/RPROM SELECTION GUIDE ARCHITECTURE 2 32K x 8 WS57C71C 16K x 8 WS57C51C 8K x 8 WS57C49C 4K x 8 WS57C43C 2K x 8 REGISTERED WS57C45 2K x 8 WS57C191C 2Kx8 WS57C291C 2K x 8 (3 VOLT) WS57LV29IC 45 50 55 ACCESS TIME (ns) NOTE: Shaded area is Advance Information.

SS1203

Abstract: N82S191A 27HC642 N82S191 cy7c292 cross reference cy7c291 cross reference
Contextual Info: PROM/RPROM CROSS REFERENCE AMD WSI NATIONAL WSI AM27C49 AM27C191 AM27C291 AM27PS43 AM27S43 AM27S43A AM27S45 AM27S49 AM27S51 AM27S51A AM27S191 AM27S291 WS57C49C WS57C291C WS57C291C WS57C43C WS57C43C WS57C43C WS57C45 WS57C49C WS57C51C WS57C51C WS57C191C WS57C291C

Contextual Info: WS57C43C HIGH SPEED 4Kx 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP — t Acc = 25 ns — t cs = 12 ns — Up to 200 mA • Low Power Consumption • Fast Programming • ESD Protection Exceeds 2000 V

256x16

Abstract: WS57C43-55 WS57C43-70 WS57C43B-55 WS57C43C-30 XL46C32-70 XL46C32-85
Contextual Info: -57 4 6 C 3 2 X 'i -y t y •? 14 TOE max !ns TOD lax ns) *6 ■ ¡m,m M « ít £ C O TAAC max (ns) TCAC max (ns) TOH max (ns) VDD (V) A iff I DD/STANDBY <mA) VIL max (V) -h VIH min (V) ifj i ) / n £ Ci max (pF) V O L / I VOL (V/inA) WS57C43-55 WAFERSCALE

NEC uPB

Abstract: ATMEL PROM AM27S45 SS1203 SIGNETICS prom WSI Cross Reference AM27S51A AM27S51 cy7c291 cross reference N82HS1281
Contextual Info: PROM/RPROM CROSS REFERENCE AMD WSI NATIONAL WSI AM27C49 AM27C191 AM27C291 AM27PS43 AM27S43 AM27S43A AM27S45 AM27S49 AM27S51 AM27S51A AM27S191 AM27S291 WS57C49C WS57C291C WS57C291C WS57C43C WS57C43C WS57C43C WS57C45 WS57C49C WS57C51C WS57C51C WS57C191C WS57C291C

Contextual Info: WS57C43B HIGH SPEED 4K x 8 CMOS PROM/RPROM K E Y FEA TU R E S • U ltra-Fast A ccess Tim e • Pin C om patible with A m 27S 43 and N82S321 B ipolar P RO M s — 35 ns • Low Pow er C onsum ption Im m u ne to Latch-U p • Fast Program m ing — Up to 200 mA

Contextual Info: WS57C43C MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP • Ultra-Fast Access Time — *A C C = 35 ns — Up to 200 mA — ^cs ~ • Low Power Consumption • Fast Programming • DESC SMD No. 5962-906580

Contextual Info: WS57C43C MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP • Ultra-Fast Access Time — l ACC = 3 5 n s — tc s = 20 ns — Up to 200 mA • Low Power Consumption • Fast Programming

Contextual Info: WS57C43C HIGH SPEED 4Kx 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP — ' a c c = 2 5 ns — t Cs = 1 2 n s — Up to 200 mA • Low Power Consumption • Fast Programming • ESD Protection Exceeds 2000 V

WS57C43C45TI

Contextual Info: WS57C43C HIGH SPEED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with 4K x 8 Bipolar P RO M s • Immune to Latch-UP • Ultra-Fast A ccess Time — lACC = 2 5 n s — tcs = 12 ns — Up to 200 mA • Low Power Consumption • Fast Programming • E SD Protection Exceeds 2000 V

16k prom

Abstract: 16k x 8 PROM ws57c43 datasheet for 4K x -12sl WS57C191C WS57C291C WS57C43C WS57C45
Contextual Info: PROM/RPROM SELECTION GUIDE ARCHITECTURE 32K x 8 WS57C71C 16K x 8 WS57C51C 8K x 8 WS57C49C 4K x 8 WS57C43C 2K x 8 REGISTERED WS57C45 2K x 8 WS57C191C 2K x 8 WS57C291C 2K x 8 (3 VOLT) WS57LV291C 25 30 35 40 45 50 55 60 65 70 90 ACCESS TIME (ns) Return to Main Menu

57C43B

Contextual Info: • ■ísaibiG o D ü a n h WAFER S C A L E llilAF 73fl WS57C43B IN T E G R A T I O N HIGH SPEED 4Kx 8 CMOS PROM/RPROM FOR MAINTENANCE PURPOSES ONLY! NO T TO BE USED FOR NEW DESIGNS. SEE WS57C43C FOR NEW VERSION! K E Y FEATURES • Ultra-Fast Access Time

57c43b

Abstract: 57c43b-35 57C43B-70 WS57C43B-45T
Contextual Info: WS57C43B HIGH SPEED 4Kx 8 CMOS PROM/RPROM FOR M AIN T E N A N C E PU R PO SES ONLY! N O T TO BE USED FOR N E W DESIGNS. SEE WS57C43C FOR N E W VERSION' KEY FEATURES • Ultra-Fast Access Time — • Pin Compatible with Am27S43 and N82S321 Bipolar PROMs 35 ns

A1t smd

Abstract: a1t MARKING
Contextual Info: WS57C43C MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time — l ACC = cs 35 • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP ns : 20 ns — Up to 200 mA • Low Power Consumption • Fast Programming • DESC SMD No. 5962-906580

KO 317

Abstract: WS57C43C-35CMB 57C43C-25 57C43C-35 57C43C-45 57C43C-55 57C43C-70 WS57C43C WS57C43C-25D WS57C43C-25J
Contextual Info: WS57C43C HIGH SPEED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP — t ACC = 25 ns — t CS = 12 ns — Up to 200 mA • Low Power Consumption • Fast Programming • ESD Protection Exceeds 2000 V

smd A9

Abstract: SMD 6 PIN A4 marking smd 5 pin marking a9 SMD T1 IS 5 Pin Bipolar PROM programming smd marking a7 smd a10 ws57c43 smd a7 smd diode A4
Contextual Info: WS57C43C MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP — t ACC = 35 ns — t CS = 20 ns — Up to 200 mA • Low Power Consumption • Fast Programming

Contextual Info: WAFER SCALE INTEGRATION ^ DE I TSBTlnTG □□□□Ibfc. 3 § -§ J T b WS57C43B WAFERSCALE INTEGRA HON, INC. PRELIMINARY HIGH SPEED 4K x 8 CMOS RPROM i KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with AM27S43 and N82S321 Bipolar PROMs • Immune to Latch-Up

Contextual Info: WS57C43C HIGH SPEED 4Kx 8 CMOS PROM/RPROM KEY FEATURES 1 Ultra-Fast Access Time • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP — I acc = 25 ns — tcs = "12 ns — Up to 200 mA Low Power Consumption • ESD Protection Exceeds 2000 V

Contextual Info: WS57C43C MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP — t ACC = 35 ns — t CS = 20 ns — Up to 200 mA • Low Power Consumption • Fast Programming