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    HXSRD01

    Abstract: 10Gb trivor smd transistor M21 Lanes PRBS31 w21 transistor smd 8B10B S150 honeywell material spec microcircuit w18 smd transistor
    Contextual Info: HXSRD01 Trivor SERDES Quad Redundant Transceiver Radiation Hardened Features • Fabricated on S150 Silicon On Insulator SOI CMOS ■ ■ 150 nm Process (Leff = 110 nm) 4 Channel (Quad) Transceiver with Redundant Transmitters ■ Channel Data Rates to 3.1875Gb/s


    Original     		hxsrd011875gb/s10gb/s1x106+141x10-122x10-121x10141x10101x101210gb trivorsmd transistor m21lanesprbs31w21 transistor smd8b10bs150honeywell material spec microcircuitw18 smd transistor PDF

    5962L0053605VYC

    Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
    Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A


    Original     		mil-hdbk-103ajmil-hdbk-103ah5962l0053605vyc5962-9069204qxa+8atmel 302 24c16ut9q512e-20yccmoh0268dut54acs164245seiuccrz0858105962-9762101q2aut28f256qlet-45ucc5962r0250401kxa PDF