J64-1
Abstract: UPF20120 ultrarf J296 J6-41 J641
Contextual Info: URFDB Sec 12_20120 11/3/99 11:19 AM Page 12-1 UPF20120 120W Push-Pull, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum
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UPF20120
30dBc
J64-1
UPF20120
ultrarf
J296
J6-41
J641
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J216
Abstract: UPF1030 J2-13
Contextual Info: URFDB Sec 05_1030 11/3/99 10:39 AM Page 5-1 UPF1030 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM,
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UPF1030
30dBc
J216
UPF1030
J2-13
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J406
Abstract: J248 J425 ultrarf UPF2245 J242
Contextual Info: URFDB Sec 14_2245 11/3/99 11:23 AM Page 14-1 UPF2245 45W, 2.2GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.2GHz. Rated with a minimum output power of 45W, it is ideal for CDMA, TDMA,
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UPF2245
30dBc
J406
J248
J425
ultrarf
UPF2245
J242
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diode C531
Abstract: c531 diode C531 ultrarf 10UF MMBTA64 MRF21060 UPF21060 f217
Contextual Info: UPF21060 60W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 60W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier
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UPF21060
MRF21060
diode C531
c531 diode
C531
ultrarf
10UF
MMBTA64
MRF21060
UPF21060
f217
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ultrarf
Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier
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UGF09030
800MHz
1000MHz.
MRF9030
870MHz
CDMA2000:
350mA
ultrarf
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ADC-815MC
Abstract: ADC-825MM ADC-825 8 bit ttl ADC LU12 ADC-815 815MC ADC-825MC ADC815MC ADC-815MM
Contextual Info: ADC-815, ADC-825 Ultra-Fast 8-Bit A/D Converters FEATURES • 8-Bit resolution • 700 Nanoseconds or 1 microsecond conversion tim e • 6 Input ranges • Parallel or serial outputs • No calibration required GENERAL DESCRIPTION DATEL’s ADC-815 and ADC-825 are v,eryhigh-speed-8-bit successive approxim a
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ADC-815,
ADC-825
ADC-815
SHM-40
ADC-816,
ADC-815MC
ADC-815MM
ADC-825MM
8 bit ttl ADC
LU12
815MC
ADC-825MC
ADC815MC
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ultrarf
Abstract: UPF18030 MRF18030
Contextual Info: UPF18030 30W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power
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UPF18030
100kHz
270mA
270mA,
ultrarf
UPF18030
MRF18030
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A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
Abstract: GaN amplifier Microwave Development Company dummy load volterra N6030 GaN amplifier 100W 4G base station power amplifier combiner THEORY Square D DPA 12 MAR-2 MMIC
Contextual Info: This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1 A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
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ultrarf
Abstract: MRF21090 UGF21090
Contextual Info: UGF21090 90W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 2.11 to 2.17 GHz. Rated with a minimum output power of 90W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier
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UGF21090
MRF21090
ultrarf
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UGF21090
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UPF2030
Abstract: ultrarf
Contextual Info: URFDB Sec 09_2030 11/3/99 11:09 AM Page 9-1 UPF2030 30W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA,
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UPF2030
30dBc
225mA
UPF2030
ultrarf
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potentiometer 1k ohm
Abstract: L2 diode ultrarf ATC100 MMBTA64 MRF19060 UPF19060 Z8 SOT23 diode zener Z11 0603 440117
Contextual Info: UPF19060 60W, 2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS and PCN base station applications in the frequency band 1.9 to 2.0 GHz. Ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation.
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UPF19060
MRF19060
potentiometer 1k ohm
L2 diode
ultrarf
ATC100
MMBTA64
MRF19060
UPF19060
Z8 SOT23
diode zener Z11 0603
440117
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ultrarf
Abstract: UPF18045-159 2200PF 470PF 47UF MBD701 MMBTA64 1UF 50V SMT CASE C diode gp 805
Contextual Info: UPF18045-159 45W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a typical output power of 50 W PEP for high peak-to-average signals , this device is well suited in
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UPF18045-159
2200PF
470PF
47UF
MBD701
MMBTA64
1UF 50V SMT CASE C
diode gp 805
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UPF2010F
Abstract: ultrarf UPF2010 UPF2010P
Contextual Info: UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers
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UPF2010
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UPF2010F
UPF2010P
UPF2010F
ultrarf
UPF2010
UPF2010P
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ultrarf
Abstract: MRF19090 UPF19090
Contextual Info: UPF19090 90W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1.9 to 2.0 GHz. Rated with a minimum output power of 90W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power
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UPF19090
IS-95
30kHz
100kHz
800mA
800mA,
ultrarf
MRF19090
UPF19090
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ultrarf
Abstract: MRF19060 UGF19060
Contextual Info: UGF19060 60W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier
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UGF19060
MRF19060
CDMA2000:
600mA
100kHz
MRF19060
ultrarf
UGF19060
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A High Efficiency Doherty Amplifier with Digital Predistortion for WiMAX
Abstract: CGH27030 op4400 200w power amplifier PCB layout GaN amplifier 100W 200w mono OP44 100w car amplifier GaN Bias 25 watt ultrarf
Contextual Info: From December 2008 High Frequency Electronics Copyright 2008 Summit Technical Media, LLC High Frequency Design DOHERTY AMPLIFIER A High Efficiency Doherty Amplifier with Digital Predistortion for WiMAX By Simon Wood and Ray Pengelly, Cree, Inc., and Jim Crescenzi, Central Coast Microwave Design, LLC
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Abstract: MRF19090
Contextual Info: UGF19090 90W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 90W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier
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MRF19090
CDMA2000:
900mA
100kHz
MRF19090
ultrarf
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ultrarf
Abstract: 10UF MMBTA64 MRF21090 UPF21090 irl 2807 300GP 82-5022
Contextual Info: UPF21090 90W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation.
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MRF21090
ultrarf
10UF
MMBTA64
MRF21090
UPF21090
irl 2807
300GP
82-5022
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J377
Abstract: J380 J373 J207 ultrarf UPF2425 J362 J2-21 J209 J369
Contextual Info: URFDB Sec 15_2425 11/3/99 11:27 AM Page 15-1 UPF2425 25W, 2.4GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.4GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA,
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30dBc
J377
J380
J373
J207
ultrarf
UPF2425
J362
J2-21
J209
J369
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transistor f1 j39
Abstract: UPB1904B j521 ultrarf
Contextual Info: URFDB Sec 03_1904B 11/3/99 10:20 AM Page 3-10 UPB1904B 4W, 1.9GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 1.9GHz. Rated with a minimum output power of 4W, it is ideal for CDMA, TDMA, GSM, FM,
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1904B
UPB1904B
30dBc
100oC
175oC
transistor f1 j39
UPB1904B
j521
ultrarf
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J552
Abstract: J3510 j528 ultrarf J5-28 UPB1001B J418 J351
Contextual Info: URFDB Sec 03_1001B 11/3/99 10:17 AM Page 3-1 UPB1001B 1W, 1GHz, 26V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 1W, it is ideal for CDMA, TDMA, GSM, FM,
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1001B
UPB1001B
30dBc
140mA
100oC
175oC
J552
J3510
j528
ultrarf
J5-28
UPB1001B
J418
J351
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J406
Abstract: TRANSISTOR J406 TRANSISTOR j412 ultrarf UPB2025B J245
Contextual Info: URFDB Sec 03_2025B 11/3/99 10:35 AM Page 3-50 UPB2025B 25W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM,
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2025B
UPB2025B
30dBc
250mA
100oC
175oC
J406
TRANSISTOR J406
TRANSISTOR j412
ultrarf
UPB2025B
J245
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J659
Abstract: ultrarf UPB1925B 332TM J162 J328
Contextual Info: URFDB Sec 03_1925B 11/3/99 10:24 AM Page 3-26 UPB1925B 25W, 1.9GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 1.9GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM,
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1925B
UPB1925B
30dBc
Vol865
240mA
100oC
J659
ultrarf
UPB1925B
332TM
J162
J328
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F1 J36
Abstract: ultrarf UPF1080
Contextual Info: URFDB Sec 07_1080 11/3/99 10:53 AM Page 7-1 UPF1080 80W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM,
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F1 J36
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UPF1080
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