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UGF19060 Datasheets (4)

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Cree

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UGF19060	Cree	60W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET	Original	PDF	133.6KB	3
UGF19060	Cree	LDMOS FETs in Class AB Operation 1900 MHz Cellular	Original	PDF	123.71KB	3
UGF19060F	Cree	FET Transistor, 60W, 1.9GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	123.68KB	3
UGF19060P	Cree	FET Transistor, 60W, 1.9GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	123.68KB	3

UGF19060 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ultrarf Abstract: MRF19060 UGF19060 Contextual Info: UGF19060 60W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	UGF19060 MRF19060 CDMA2000: 600mA 100kHz MRF19060 ultrarf UGF19060	PDF
MRF19060 Abstract: MRF19060S UGF19060 UGF19060F UGF19060P Contextual Info: UGF19060 60W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	UGF19060 MRF19060, MRF19060S CDMA2000: MRF19060 MRF19060S UGF19060 UGF19060F UGF19060P	PDF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b	PDF

Catalog Datasheet

Type

Document Tags

PDF

ultrarf

Abstract: MRF19060 UGF19060
Contextual Info: UGF19060 60W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier

Original

UGF19060 MRF19060 CDMA2000: 600mA 100kHz MRF19060 ultrarf UGF19060

PDF

MRF19060

Abstract: MRF19060S UGF19060 UGF19060F UGF19060P
Contextual Info: UGF19060 60W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier

Original

UGF19060 MRF19060, MRF19060S CDMA2000: MRF19060 MRF19060S UGF19060 UGF19060F UGF19060P

PDF

semiconductors cross reference

Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30

Original

BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b

PDF