Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UPF1010 Search Results

    UPF1010 Datasheets (6)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    UPF1010
    		Cree LDMOS FETs in Class AB Operation Cellular to 1 GHz Original PDF 256.65KB 11
    UPF1010-178
    		Cree FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 256.65KB 11
    UPF1010F
    		Cree 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF 211.41KB 12
    UPF1010F
    		Cree FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 256.65KB 11
    UPF1010P
    		Cree 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF 211.41KB 12
    UPF1010P
    		Cree FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 256.65KB 11

    UPF1010 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    UPF1010

    Abstract: f940 ultrarf
    Contextual Info: URFDB Sec 04_1010 11/3/99 10:37 AM Page 4-1 UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		UPF1010 30dBc UPF1010 f940 ultrarf PDF

    semiconductors cross reference

    Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
    Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30


    Original     		BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b PDF

    J181

    Abstract: UPF1010F f940 ultrarf UPF1010 UPF1010P package type 440109
    Contextual Info: UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers


    Original     		UPF1010 30dBc UPF1010F UPF1010P J181 UPF1010F f940 ultrarf UPF1010 UPF1010P package type 440109 PDF

    UPF1010F

    Abstract: J181 upf1010 UPF1010-178 UPF1010P 100UF 47PF
    Contextual Info: UPF1010 10W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		UPF1010 30dBc UPF1010F UPF1010P UPF1010-178 UPF1010 UPF1010F J181 UPF1010-178 UPF1010P 100UF 47PF PDF