UPF1010 Search Results

UPF1010 Datasheets (6)

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Cree

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UPF1010		Cree	LDMOS FETs in Class AB Operation Cellular to 1 GHz	Original	PDF	256.65KB	11
UPF1010-178		Cree	FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	256.65KB	11
UPF1010F		Cree	10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS	Original	PDF	211.41KB	12
UPF1010F		Cree	FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	256.65KB	11
UPF1010P		Cree	10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS	Original	PDF	211.41KB	12
UPF1010P		Cree	FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	256.65KB	11

UPF1010 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
UPF1010 Abstract: f940 ultrarf Contextual Info: URFDB Sec 04_1010 11/3/99 10:37 AM Page 4-1 UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,	Original	upf1010 30dbc f940 ultrarf	PDF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	blf1043 upf1010 blf3g21-30 upf1030 +14ugf09030 blf1046 ugf09045 ugf09060 blf4g10-120 semiconductors cross reference ugf18030 cw 180 ugf16085 upf14060 transistors cross reference list blc5g22-100 ugf25025 blf4g20-110b	PDF
J181 Abstract: UPF1010F f940 ultrarf UPF1010 UPF1010P package type 440109 Contextual Info: UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers	Original	upf1010 30dbc upf1010f upf1010p +4j181 f940 ultrarf package type 440109	PDF
UPF1010F Abstract: J181 upf1010 UPF1010-178 UPF1010P 100UF 47PF Contextual Info: UPF1010 10W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.	Original	upf1010 30dbc upf1010f upf1010p +4upf1010-178 j181 100uf 47pf	PDF