UGF19060P Search Results

UGF19060P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UGF19060P		Cree	FET Transistor, 60W, 1.9GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	123.68KB	3

UGF19060P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MRF19060 Abstract: MRF19060S UGF19060 UGF19060F UGF19060P Contextual Info: UGF19060 60W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	UGF19060 MRF19060, MRF19060S CDMA2000: MRF19060 MRF19060S UGF19060 UGF19060F UGF19060P	PDF

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MRF19060

Abstract: MRF19060S UGF19060 UGF19060F UGF19060P
Contextual Info: UGF19060 60W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier

Original

UGF19060 MRF19060, MRF19060S CDMA2000: MRF19060 MRF19060S UGF19060 UGF19060F UGF19060P

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