Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    UPF2010F Search Results

    UPF2010F Datasheets (2)

    Cree
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    UPF2010F
    		Cree 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF 390.36KB 14
    UPF2010F
    		Cree FET Transistor, 10W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 234.52KB 12

    UPF2010F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    UPF2010F

    Abstract: ultrarf UPF2010 UPF2010P
    Contextual Info: UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers


    Original     		upf201030dbcupf2010fupf2010p+1ultrarf PDF

    UPF2010-178

    Abstract: Cree Microwave upf2010 AC DC 10w 100UF 47PF UPF2010 UPF2010F UPF2010P J033 package type 440109
    Contextual Info: UPF2010 10W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rater with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		upf201030dbcupf2010fupf2010p+9upf20ap100uf125mwupf2010-178cree microwave upf2010ac dc 10w47pfj033package type 440109 PDF