UPF2010 Search Results

UPF2010 Datasheets (7)

Filter by Manufacturer

Cree

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UPF2010		Cree	10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS	Original	PDF	149.89KB	9
UPF2010		Cree	Ldmos Fets in Class ab Operation 1800 MHZ Cellular	Original	PDF	234.52KB	12
UPF2010-178		Cree	FET Transistor, 10W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	234.52KB	12
UPF2010F		Cree	10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS	Original	PDF	390.36KB	14
UPF2010F		Cree	FET Transistor, 10W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	234.52KB	12
UPF2010P		Cree	FET Transistor, 10W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	234.52KB	12
UPF2010P		Cree	10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS	Original	PDF	390.36KB	14

UPF2010 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
UPF2010F Abstract: ultrarf UPF2010 UPF2010P Contextual Info: UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers	Original	upf2010 30dbc upf2010f upf2010p +1ultrarf	PDF
UPF2010 Abstract: 1103AM package type 440109 Contextual Info: URFDB Sec 08_2010 11/3/99 11:03 AM Page 8-1 UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA,	Original	upf2010 30dbc 1103am package type 440109	PDF
UPF2010-178 Abstract: Cree Microwave upf2010 AC DC 10w 100UF 47PF UPF2010 UPF2010F UPF2010P J033 package type 440109 Contextual Info: UPF2010 10W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rater with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.	Original	upf2010 30dbc upf2010f upf2010p +9upf20ap 100uf 125mw upf2010-178 cree microwave upf2010 ac dc 10w 47pf j033 package type 440109	PDF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	blf1043 upf1010 blf3g21-30 upf1030 +14ugf09030 blf1046 ugf09045 ugf09060 blf4g10-120 semiconductors cross reference ugf18030 cw 180 ugf16085 upf14060 transistors cross reference list blc5g22-100 ugf25025 blf4g20-110b	PDF