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UGF09030 Datasheets (3)

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Cree

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UGF09030		Cree	30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET	Original	PDF	143.45KB	4
UGF09030F		Cree	FET Transistor, 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	180.09KB	7
UGF09030P		Cree	FET Transistor, 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	180.09KB	7

UGF09030 Price and Stock

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Cree, Inc.


Cree, Inc. UGF09030F MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) - Datasheet Reference
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	UGF09030F		126			1 $42.19 10 $42.19 100 $37.32 1000 $35.70 10000 $35.70	Buy Now

UGF09030 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ultrarf Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	ugf09030 800mhz 1000mhz mrf9030 +4870mhz cdma2000 350ma ultrarf	PDF
UGF09030P Abstract: UGF09030F 110MIL Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	ugf09030 800mhz 1000mhz mrf9030 +826vdc 945mhz ugf09030f 400ma 940mhz is-97 ugf09030p 110mil	PDF
Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	ugf09030 800mhz 1000mhz 870mhz +3mrf9030 cdma2000 ugf9030f	PDF
Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	ugf09030 800mhz 1000mhz 870mhz +3mrf9030 cdma2000 ugf09030f	PDF
Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	ugf09030 800mhz 1000mhz mrf9030 +4870mhz ugf9030f cdma2000 350ma	PDF
cree MOS Abstract: MRF9030 UGF09030 UGF09030P UGF9030F UGF9030P Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	ugf09030 800mhz 1000mhz 870mhz +6mrf9030 cdma2000 ugf9030f cree mos ugf09030p ugf9030p	PDF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	blf1043 upf1010 blf3g21-30 upf1030 +14ugf09030 blf1046 ugf09045 ugf09060 blf4g10-120 semiconductors cross reference ugf18030 cw 180 ugf16085 upf14060 transistors cross reference list blc5g22-100 ugf25025 blf4g20-110b	PDF