UGF09030F Search Results
UGF09030F Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| UGF09030F |
|
FET Transistor, 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs | Original | 180.09KB | 7 |
UGF09030F Price and Stock
Cree, Inc. UGF09030FMOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) - Datasheet Reference |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
UGF09030F | 126 |
|
Buy Now | |||||||
UGF09030F Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
UGF09030P
Abstract: UGF09030F 110MIL
|
Original |
ugf09030800mhz1000mhzmrf9030+8 | |
|
Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier |
Original |
ugf09030800mhz1000mhz870mhz+3 | |
|
Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier |
Original |
ugf09030800mhz1000mhz870mhz+3 |