UGF09030F Search Results
UGF09030F Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| UGF09030F |
|
FET Transistor, 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs | Original | 180.09KB | 7 |
UGF09030F Price and Stock
UGF09030F Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
UGF09030P
Abstract: UGF09030F 110MIL
|
Original |
UGF09030 800MHz 1000MHz. MRF9030 26VDC, 945MHz, UGF09030F 400mA 940MHz IS-97 UGF09030P UGF09030F 110MIL | |
|
Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier |
Original |
UGF09030 800MHz 1000MHz. 870MHz MRF9030 CDMA2000: UGF9030F UGF09030 | |
|
Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier |
Original |
UGF09030 800MHz 1000MHz. 870MHz MRF9030 CDMA2000: UGF09030F UGF09030 |