UGF09030P Search Results
UGF09030P Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| UGF09030P |
|
FET Transistor, 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs | Original | 180.09KB | 7 |
UGF09030P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
UGF09030P
Abstract: UGF09030F 110MIL
|
Original |
ugf09030800mhz1000mhzmrf9030+8 | |
|
Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier |
Original |
ugf09030800mhz1000mhz870mhz+3 | |
|
Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier |
Original |
ugf09030800mhz1000mhz870mhz+3 | |
cree MOS
Abstract: MRF9030 UGF09030 UGF09030P UGF9030F UGF9030P
|
Original |
ugf09030800mhz1000mhz870mhz+6 |