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    UGF9030F Search Results

    UGF9030F Datasheets Context Search

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    Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original
    ugf09030800mhz1000mhz870mhz+3mrf9030cdma2000ugf9030f PDF

    Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original
    ugf09030800mhz1000mhzmrf9030+4870mhzugf9030fcdma2000350ma PDF

    cree MOS

    Abstract: MRF9030 UGF09030 UGF09030P UGF9030F UGF9030P
    Contextual Info: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original
    ugf09030800mhz1000mhz870mhz+6mrf9030cdma2000ugf9030fcree mosugf09030pugf9030p PDF