UPB1001B Search Results

UPB1001B Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UPB1001B		Cree	1W, 1GHz, 26V Broadband RF Power NPN Bipolar Transistor	Original	PDF	154.03KB	9

UPB1001B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
J552 Abstract: J3510 j528 ultrarf J5-28 UPB1001B J418 J351 Contextual Info: URFDB Sec 03_1001B 11/3/99 10:17 AM Page 3-1 UPB1001B 1W, 1GHz, 26V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 1W, it is ideal for CDMA, TDMA, GSM, FM,	Original	1001B UPB1001B 30dBc 140mA 100oC 175oC J552 J3510 j528 ultrarf J5-28 UPB1001B J418 J351	PDF

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J552

Abstract: J3510 j528 ultrarf J5-28 UPB1001B J418 J351
Contextual Info: URFDB Sec 03_1001B 11/3/99 10:17 AM Page 3-1 UPB1001B 1W, 1GHz, 26V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 1W, it is ideal for CDMA, TDMA, GSM, FM,

Original

1001B UPB1001B 30dBc 140mA 100oC 175oC J552 J3510 j528 ultrarf J5-28 UPB1001B J418 J351

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