UPF18030 Search Results

UPF18030 Datasheets (7)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UPF18030		Cree	30W, 1880, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS	Original	PDF	51.62KB	4
UPF18030		Cree		Original	PDF	65.07KB	6
UPF18030-095		Cree	30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET	Original	PDF	424.08KB	12
UPF18030-095		Cree	FET Transistor, 30W, 1.88GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	213.35KB	6
UPF18030-095		Cree	30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET	Original	PDF	60.55KB	4
UPF18030F		Cree		Original	PDF	65.07KB	6
UPF18030P		Cree		Original	PDF	65.06KB	6

UPF18030 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ultrarf Abstract: UPF18030 MRF18030 Contextual Info: UPF18030 30W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power	Original	upf18030 100khz 270ma ultrarf +1mrf18030	PDF
MRF19030 Abstract: UPF18030-095 Contextual Info: UPF18030-095 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for DCS base station applications in the frequency band 1.805 GHz to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM,	Original	upf18030-095 mrf19030	PDF
MRF19030 Abstract: UPF18030-095 IS954 Contextual Info: UPF18030-095 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for DCS base station applications in the frequency band 1.805 GHz to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM,	Original	upf18030-095 mrf19030 250ma is954	PDF
ultrarf Abstract: UPF18030 Contextual Info: UPF18030 30W, 1880, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers	Original	upf18030 mrf18030 ultrarf	PDF
ultrarf Abstract: UPF18030 UPF18030F UPF18030P Contextual Info: UPF18030 30W, 1880, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers	Original	upf18030 mrf18030 upf18030f ultrarf +1upf18030p	PDF
UPF18030-095 Abstract: ultrarf 2200PF 470PF 47UF MMBTA64 MRF19030 Contextual Info: UPF18030-095 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers	Original	upf18030-095 mrf19030 ultrarf 2200pf +3470pf 47uf mmbta64	PDF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	blf1043 upf1010 blf3g21-30 upf1030 +14ugf09030 blf1046 ugf09045 ugf09060 blf4g10-120 semiconductors cross reference ugf18030 cw 180 ugf16085 upf14060 transistors cross reference list blc5g22-100 ugf25025 blf4g20-110b	PDF