UGF21090 Search Results

UGF21090 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UGF21090		Cree	90W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET	Original	PDF	162.19KB	4
UGF21090		Cree	LDMOS FETs in Class AB Operation 2.1 GHz Cellular	Original	PDF	219.79KB	8
UGF21090F		Cree	FET Transistor, 90W, 2.17GHz, 26V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	174.34KB	6
UGF21090P		Cree	FET Transistor, 90W, 2.17GHz, 26V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	174.34KB	6

UGF21090 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ultrarf Abstract: MRF21090 UGF21090 Contextual Info: UGF21090 90W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 2.11 to 2.17 GHz. Rated with a minimum output power of 90W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	UGF21090 MRF21090 ultrarf MRF21090 UGF21090	PDF
UGF21090 Abstract: UGF21090F UGF21090P 50 watts amplifier 10mhz Contextual Info: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers	Original	UGF21090 17GHz, 2135MHz, 2145MHz f1-10MHz 10MHz) 100ain 28VDC, 2140MHz 84MHz UGF21090 UGF21090F UGF21090P 50 watts amplifier 10mhz	PDF
Cree Microwave Abstract: UGF21090 UGF21090F UGF21090P Contextual Info: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers	Original	UGF21090 17GHz, 2135MHz, 2145MHz f1-10MHz 10MHz) 100uthorized UGF21090 Cree Microwave UGF21090F UGF21090P	PDF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b	PDF