CEREC Search Results

Contextual Info: SIEMENS BXY 42BA-7 Silicon PIN Diode • Fast switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code B XY 42BA-7 27 Q62702-X160 Pin Configuration * ° H<3-EHA07007 Package1 Cerec-X Maximum Ratings

cfy siemens

Abstract: cfy 19 siemens CFY 19 cfy 14 siemens MARKING SOT-143 C5 CFY 18 CFY 10 6MA80 CFY10
Contextual Info: SI EM ENS A K T I E N G E S E L L S C H A F 47E D fl235büS OOSbSflü □ « S I E G GaAsFETs Metal Ceramic Package Type B B S El □ S S Max. ratings Package M arking Fig. 14 14 100 mil 100 mil C10 C11 23 23 — - 11.5 11.5 - - Cerec-XF Cerec-XF Cerec-XF

Q62702-X160

Contextual Info: Silicon PIN Diode ● BXY 42BA-7 Fast switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BXY 42BA-7 27 Q62702-X160 Pin Configuration Package1 Cerec-X Maximum Ratings Parameter Symbol Values Unit

15025

Contextual Info: SIEMENS Silicon Schottky Diodes BAT 15-. 5 R • Beam lead technology • Low dimension • High performance • Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-025 R 52 Q62702-A804

CFY19-22

Abstract: CFY19 Dual-Gate* bf981 bf987
Contextual Info: "sIEMENS AKTIENGESELLSCHAF bOE I> • SEBSbDS DDS1M7M S34 «SIEfi 'T'dó'M SIEMENS Transistoren Transistors MOS Feldeffekt-Transistoren Type MOS Field-Effect Transistors Maximum Ratings Characteristics TA= 25° C ^ds V ¡d mA P,o. G ps mW dB ' * I' c' ' '

Contextual Info: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40

BFQ58

Abstract: BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors N=NPN P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ57 BFQ58 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73 BFQ73S

BFQ71

Abstract: Q62702-F775 bfq 96
Contextual Info: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

Contextual Info: in te g r a te d c ir c u its PBD 3517 Data Sheet Stepper Motor Drive Circuit • r - i ' a x c c a ' c eve> way. .5 a Dilevel funcacc.-.e' ~ 2 ;orce resistor. ' a -: 2 - e-te'-a components r'r : : : 2_: : ' . e _ ' t ' o r _S-TTL or mi: — ; e; reccesystem for curM ~ - _e :• .e- s tec for applications

Contextual Info: SIEM ENS Silicon Schottky Diodes BAT 14-. 5 D • Beam lead technology • Low dimension • High performance • Medium barrier VCE05181 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 14-025 D

Contextual Info: SIEMENS AKTIENGESELLSCHAF bOE D • ÖE3Sb05 O O S m V b 3G7 HISIE6 SIEMENS ^ 3 / - 0/ Transistoren Transistors HF-Transistoren Maximum Ratings ^CEO h Plot V mA mW Chariicteristics rA =25°C F Gp h le ^CE f GHz dB mA V MHz dB Package h mA LU Type N=NPN P=PNP

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

A235L

Contextual Info: SIEMENS Silicon Schottky Diodes BAT 15-. 5 D • Beam lead technology • Low dimension • High performance • Low barrier VCE05181 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-025 D 52 D

cfy 19 siemens

Contextual Info: SIEMENS CFY 19 GaAs FET • • • • • Low noise High gain Ion-implanted planar structure All gold metallization For front ends • For oscillators • For antenna amplifiers from UHF up to 12 GHz • Hi rel/MIL tested upon request ESD: Electrostatic discharge sensitive device, observe handling precautions!

jc 817

Abstract: pcb817 transistor jc 817 transistor cms 225 BFQ182 BFQ 225 182 marking transistor transistor 182 BFQ 270 pcb 817
Contextual Info: SIEMENS BFQ 182 NPN Silicon RF Transistor Preliminary Data • For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • / r = 8 GHz F = 1.25 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFP29

Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
Contextual Info: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700

MGF1502

Abstract: CFY18 CFY13 CFY19 siemens gaas fet cfy11 CFY18-23 CFY16 CFY11 CFY14 CF930
Contextual Info: FUNKAMATEUR-Bauelementeinformation Mikrowelienbauelemente Analoge IS und N-Kanal-Feldeffekttransistoren auf Gallium-Arsenid-Basis Konvent, rechnoiog/e STATE-OF-THE-MT-T. Leuchtanzeigen, Faseropt. Komm., Bildverstärker u.a. Mikrowellentechn. Kfz-Elektronik

CFY19

Abstract: bf963 CFY19-18 CFY10 CFY76-08 gaasfets bf544 CFY67-08 CFY19-22 BF964S
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors Type M axim um Ratings A>s Pt G DS 20 20 20 20 20 12 30 50 30 30 30 30 200 200 200 200 200 200 23 25 25 25 18 20 20 20 30 30 200

k 1191

Abstract: Z0 607 MA GP 652 Q62702-F1189
Contextual Info: NPN Silicon RF Transistor BFQ 82 ● For low-noise, high-gain amplifiers up to 2 GHz. ● Linear broadband applications at collector currents up to 40 mA. ● Hermetically sealed ceramic package. ● fT = 8 GHz F = 1.1 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: SIEM EN S Silicon Schottky Diodes • • • • BAT 15-. 5 S Beam lead technology Low dimension High performance Low barrier VC E05193 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-025 S

Contextual Info: SIEM ENS BAT 32 Silicon Schottky Diode • • • • • • RF detector Low-power mixer Zero bias Very low capacitance For frequencies up to 18 GHz HiRel/Mii-tested diodes available ESD: Electrostatic discharge sensitive device, observe handling precautions!