A235L Search Results

siemens sab 82532

Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

SIEMENS BST

Abstract: A712S siemens 230 96 SIEMENS BST P smd 42t MAS 10 RCD SIEMENS BST h 05 60 SIEMENS BST g 02 60 HPC16 SIEMENS BST N 35
Contextual Info: SIEM ENS 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 (8k, 4k & 2k-Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 P re lim in ary Info rm ation • 4 194 304 words by 16-bit organization • 0 to 70 ”C operating temperature

smd JSs 13

Abstract: smd JSs smd JSs 99 VT244A smd JSs 75 DQ2Q-DQ23 3E2 material specification
Contextual Info: SIEM EN S 16M x 72-Bit Dynamic RAM EDO- Module E C C - Module HYM 72V1605GS-50/-60 HYM 72V1615GS-50/-60 168pin buffered DIMM Module Preliminary Inform ation • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line M em ory Module • 1 bank 16 M x 72 organisation

PLCC-68 8051 siemens

Abstract: 80C32 smd marking b4h smd marking code fj FET 80C515 80C535 80c535-n ma A235 sab-80535 SMD MARKING CODE E2H
Contextual Info: I flB3SbOS 0002020 321 SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80CS35/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only

marking code C1H SMD

Abstract: sab-c501-l24p
Contextual Info: SIEMENS 8-Bit CMOS Microcontroller C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/24/40 MHz operating frequency 8 K x 8 ROM C501 -1R only 256 x 8 RAM Four 8-bit ports Three 16-bit Timers / Counters (Timer 2 with Up/Down Counter feature)

Contextual Info: • ñ 2 3 S bO S 0Dñl45fl 0«ïb SIEMENS PROFET BTS426L1 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 VLoad dump Clamp of negative voltage at output V b b -i/o u T A v a la n c h e C la m p

Contextual Info: fl235b05 ODfllSCH 3ññ SIEMENS PROFET BTS 432 12 Smart Highside Power Switch Features Product Summary • Load dump and reverse battery protection1 80 H o a d dump • Clamp of negative voltage at output 58 Vbb-VouT Avalanche Clamp • Short-circuit protection

BSP450

Abstract: GGfllb3b Q67000-S266
Contextual Info: ô23Sb05 GGfllbBti ET? SIEM EN S BSP 450 MiniSmart • • • • • • • • • • • • High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Switching inductive load

74LS04C

Abstract: gd5f 80515K m8ab
Contextual Info: 47E D • fl23SfciüS D02ÔS7D fl ■ SIEG SIEMENS AKT IENGESELLSCHAF Xsrv SAB 80515K 8-Bit Single-Chip Microcontroller ROM-less Version • • • • • • • • • • • • • A dditional bus interface fo r external m em ory 256 x 8 RAM S ix 8-bit ports

Contextual Info: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be

cgy180

Contextual Info: SIEMENS GaAs MMIC CGY 180 Datasheet * Power amplifier for DECT and PCS application * Fully integrated 3 stage amplifier * Operating voltage range: 2.7 to 6 V * Overall power added efficiency 35 % * Input matched to 50 £2, simple output match ESD: Electrostatic discharge sensitive device,

Contextual Info: SIEMENS S/T Bus Interface Circuit Extended 1 PEB 2081 Features • Full duplex 2B+D S/T-interface transceiver according to the following specifications: - ITU Recommendation 1.430 - ETS 300 012 - ANSI T1.605 • 192 kbit/s transmission rate • Pseudo-ternary coding with 100 % pulse width

K4887-K4

Abstract: B25355-K167-K4 ws dvd 290
Contextual Info: MP DC Capacitors Smoothing, Supporting, Discharge B 25 355 High peak-current capability Wide capacitance and voltage range Construction • Self-healing • Paper dielectric • Oil and hard-wax impregnated tubular windings no PCB • Metal-sprayed face ends ensure reliable contacting

A235L

Contextual Info: SIEMENS Silicon Schottky Diodes BAT 15-. 5 D • Beam lead technology • Low dimension • High performance • Low barrier VCE05181 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-025 D 52 D

Contextual Info: FS: 04/93 Page 1 SIEMENS AG IC-SPECIFICATION TDA 4362 X Differences to the last edition Last Edition: D O K -N r. V 6 6 0 4 7 -S 1 6 0 3 -B 2 0 0 -V 1 Page 11: #P1 :.Values changed #P3: Values changed #P7: Values changed #P8: Values changed #P11: Values changed

siemens 4261-2

Abstract: a4s smd transistor smd transistor A4S smd transistor zd MARKING SMD PNP TRANSISTOR FR TRANSISTOR smd FQ siemens 4261 smd transistor marking 327 siemens automotive air temperature sensors TLE 4271 G
Contextual Info: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4261-2 Preliminary Data Bipolar 1C Features • • • • • • • • • • • • • • High accuracy 5 V + 2% Very low-drop voltage Very low quiescent current Low starting-current consumption Proof against reverse polarity

24C04 wp

Abstract: IA 942 EEprom program eeprom 24c04 6 Q67100-H3525 Q67100-H3526 Q67100-H3527 Q67100-H3531 Q67100-H3532 DAT200 of eeprom 24c04
Contextual Info: • û235bG5 OO^Ô^bM 1 3 3 SIEM ENS 4 K bit 512 x 8 bit Serial C M O S E E P R O M s, I 2C Synchro n o us 2-W ire Bus, Page Protection Mode SLx 24C 04/P Preliminary Features • Data EEPROM internally organized as 512 bytes and 32 pages x 16 bytes • Page protection mode, flexible page-by-page

SMD MARKING CODE E2H

Abstract: SMD MARKING CODE E4H marking code C1H SMD Q67120-C991 SAB-C501-L24N Siemens SAB-C501 siemens sm2 c947 smd marking b4h C501
Contextual Info: SIEMENS 8-Bit CMOS Microcontroller C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/24/40 MHz operating frequency 8 K x 8 ROM C501 -1R only 256 x 8 RAM Four 8-bit ports Three 16-bit Timers / Counters (Timer 2 with Up/Down Counter feature)

EM 257

Abstract: BC257 bc257 siemens BC257B BC258 A235L TR BC BC258A BC258B siemens 1q
Contextual Info: SIE D SIEMENS • öE3SbGS GDMlSHfi 425 H S I E 6 SIEMENS AKTIENGESELLSCHAF T - 2 S \- Z \ PNP Silicon AF Transistors BC 257 . BC 259 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 167, BC 168, BC 1 6 9 NPN

z58 diode

Contextual Info: fcTT &3D D • ÖS3Sfc.GS OGlMbVa 2 M S I E G 88D 14678 — D BUZ 58 SIEMENS AK TI EN 6E SE LLSCH AF- Main ratings N-Channel = 1000 V Draln-source voltage ^DS = 4,2 A Continuous drain current h Draln-source on-resistance ^DS on = 2,0 n Description SIPMOS, N-channel, enhancement mode

Contextual Info: B 41 564, B 41 584 B 43 564, B 43 584 Capacitors with Screw Term inals L L Grade For professional current converter technology Voltage ratings up to 500 Vdc Construction • Charge-discharge proof, polar • Aluminum case with insulating sleeve • Poles with screw terminal connections

Contextual Info: Metallized Polypropylene Film Capacitors MKP in Plastic Case B 32 620 . B 32 622 MKP stacked-film capacitors Smallest possible dimensions _ / _ b T I Construction • • • • Dielectric: polypropylene Stacked-film technology Plastic case (UL 94 V-0)

D53-92

Abstract: B37942
Contextual Info: Standard Chip Capacitors Z5U Y5U /2F4 fS M D l Features • Extremely high volumetric efficiency • Non-linear capacitance change Applications • • • • Blocking Coupling Decoupling Interference suppression Terminals • For soldering: silver-nickel-tin

Contextual Info: SIEMENS BCR 185S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in biase resistor (R-|=10kfl, R2=47ki2) II O o> CO II O ro Package