0H35B05 Search Results
0H35B05 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SIEMENS Standard EEPROM ICs SLx 24C08/16 8/16 Kbit 1024/2048 x 8 bit Serial CM O S-EEPRO M with I2C Synchronous 2-Wire Bus D atasheet 1998-07-27 ÖHBSbQS O l l W S TSS I SLx 24C08/16 Revision History: Current Version: 1998-07-27 Previous Version: 06.97 Page |
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24C08/16 A23SbD5 | |
m43of
Abstract: TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209
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PEB2091 PEF2091 013751t, flE35b05 m43of TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209 | |
Siemens k1403
Abstract: SKM 181 R siemens Package Outlines P-LCC Q67100-H6562 ic ZN 415 SBGX skm 191 siemens si 200 LC Communication cable pin diagram k1403 marking kjd
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P-LCC-28-R 251BI 25IAI A23SbDS Siemens k1403 SKM 181 R siemens Package Outlines P-LCC Q67100-H6562 ic ZN 415 SBGX skm 191 siemens si 200 LC Communication cable pin diagram k1403 marking kjd | |
POWER SUPPLY BTS SIEMENSContextual Info: • ÖE35bD5 0103427 ^50 SIEMENS TrilithlC BTS 780 Target Data Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications |
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E35b05 fl235b05 01034m 535b05 01034M2 Q1Q3443 P-T0263-15-1 POWER SUPPLY BTS SIEMENS | |
infineon tle hallContextual Info: Dynamic Differential Hall Effect Sensor 1C TLE 4923 Bipolar 1C Features Advanced performance Higher sensitivity Symmetrical thresholds High piezo resistivity Reduced power consumption South and north pole pre-induction possible AC coupled Digital output signal |
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Q62705-K408 4921-3U, G13M337 g35bD5 13M33a-MM7 infineon tle hall | |
Contextual Info: SIEMENS BCR 116W NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kfl, R2=47kfi _ 0_ LT t r Marking Ordering Code Pin Configuration BCR 116W WGs UPON INQUIRY 1= B Package LU |
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47kfi) OT-323 B35bG5 | |
transistor R 405Contextual Info: SIEMENS SI EGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability |
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Q62702-F1592 OT-343 a235b05 transistor R 405 |