AS35B Search Results

diode 14512 H

Abstract: buz23 IC 14511
Contextual Info: aaD D • as35bQ5 88D qgihsio 14510 D a hsieg 1 ~ ' 3 * ? '/ / BUZ 23 SIEMENS AKTIENGESELLSCHAF _ Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case K>8 h ^OS on = 100 V - 10 A

Siemens Halbleiter

Contextual Info: SIEMENS ICs for Communications 1-Chip Car Radio TUA 4306 Specification 16.3.99 • I aS35bGS 0 1 3 7 ^ 535 ■ Edition 16.3.99 Published by Siem ens AG, Bereich Halbleiter, M arketingKom m unikation, Balanstraße 73, 81541 München Siem ens AG 1995. All Rights Reserved.

3TF SIEMENS

Abstract: IC 14511 diode 14512 H 3TF-11 SIEMENS BUZ23 SIEMENS C67078-A1002-A2 BUZ23
Contextual Info: aaD D • as35bQ5 q g i h s i o a h s i e g 14510 D 1~' 3 * ? ' / / 88D BUZ 23 SIEMENS AKTIENGESELLSCHAF _ Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case K>8 = 100 V - 10 A

siemens sab 82532

Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

Contextual Info: Electrical Characteristics SIEM ENS 5 Electrical Characteristics Absolute Maximum Ratings Parameter Symbol Limit Values Unit Voltage on any pin with respect to ground Vs - 0.4 to V Am bient temperature under bias Ta O to 70 Storage temperature 7stg - 6 5 to 125

B34 SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE jg smd TRANSISTOR code marking wL TRANSISTOR SMD MARKING CODE XI SMD marking B34 TLE4278G TLE4278 AED01546 AEP02113 SD 4278
Contextual Info: SIEMENS flE3SbOS □□'ìbfc.fig LSI 5-V Low -D rop Fixed V oltage R egulator TL E 4 278 G Preliminary Data Features • • • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Separated reset and watchdog output

Contextual Info: SIEM ENS 1550 nm Laser in Coaxial Package with SM-Pigtail, Medium Power STM 81004X STM 81005X • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and

Transistor BFR 97

Abstract: bfr 49 transistor BFR34A
Contextual Info: SIEMENS BFR 34A NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 34A BFR 34A Q62702-F346-S1

siemens sab 82538

Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

as35b

Abstract: LM35 Precision Centigrade Temperature Sensors ci AS35DN as35 fan speed control using lm35 LM35 Precision Centigrade Temperature Sensors LM35 application circuits with AS35AT AS35CAT AS35CN
Contextual Info: Precision Centigrade Tem perature Sensor FEATURES • • • • • • • • • Linear +10.0mv/°C Scale Factor 0.5°C Accuracy Guaranteeable at +25°C Calibrated Directly In ° Celsius (Centigrade) Operates From 4V to 30V Less Than 60|iA Current Drain

transistor DA3 307

Abstract: transistor DA3 309 HC-49/transistor DA3 307 DA3 307
Contextual Info: • fl235bDS 0 0 8 1 4 4 4 5T1 SIEMENS PROFET BTS412B2 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump

Contextual Info: SIEMENS BF 775 NPN Silicon RF Transistor •Especially suitable forT V -sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775 LOs Q62702-F102 1= B Package 2= E 3=C

kd smd transistor

Contextual Info: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated

Contextual Info: BFG 19S SIEMENS NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers In antenna and telecommunications system s up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -typ e available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!

d1117

Abstract: AES02079 AEB02072
Contextual Info: S IEM EN S TrilithIC BTS 771 Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low Rds on @ 25 °C: High-side switch: typ. 85 mQ,

kp 72

Contextual Info: ,•— Infineon technologies Surface Mount Piezoresistive Silicon Absolute Pressure Sensor KP 202-R/RK KP 203-R/RK Preliminary Features • • • • • High sensitivity and linearity Fast response Very small dimensions Low cost Produced in qualified semiconductor

Contextual Info: ,•— SPP 70N10L Infineon t«c hnoIogi Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f ì DS onì 0.016 n

Contextual Info: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration

Contextual Info: PMB 2306R/PMB 2306T SIEMENS Table of Contents Page 1 1.1 1.2 1.3 1.4 O v erv ie w .3 F eatures. 3

Contextual Info: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be

Contextual Info: BSO 305N I nf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features 30 V • Dual N Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current

Contextual Info: SIEMENS BAS 125W Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAS 125-04W BAS 125-06W A1/A2 JZL III ET Cl C2 CHMT1I

Contextual Info: SIEMENS Standard EEPROM ICs SLx 24C08/16 8/16 Kbit 1024/2048 x 8 bit Serial CM O S-EEPRO M with I2C Synchronous 2-Wire Bus D atasheet 1998-07-27 ÖHBSbQS O l l W S TSS I SLx 24C08/16 Revision History: Current Version: 1998-07-27 Previous Version: 06.97 Page

Contextual Info: SIEMENS BCR 196W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=47k£i, Ft2=22kf2 PI tr n r Marking Ordering Code Pin Configuration BCR 196W WXs UPON INQUIRY 1=B Package o II