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    siemens sab 82538

    Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
    Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each


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    crc-32fl23sb05siemens sab 825383tb siemens+8t-0657siemens pm 350 98sab 80188qd70siemens escc81fa markingprocessor hbt 00 04 gq67100-h6441 PDF

    Contextual Info: SIEMENS BF 775 NPN Silicon RF Transistor •Especially suitable forT V -sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775 LOs Q62702-F102 1= B Package 2= E 3=C


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    q62702-f102ot-23is21el2is21/s+2as35bg5giai71b PDF

    Contextual Info: PMB 2306R/PMB 2306T SIEMENS Table of Contents Page 1 1.1 1.2 1.3 1.4 O v erv ie w .3 F eatures. 3


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    2306r/pmb2306tp-dso-14-135x45+1ssh14x PDF

    Contextual Info: SIEMENS TL E 4270 5-V L ow -D rop Fixed V o ltage R egulator Features Output voltage tolerance < ± 2 % Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms


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    q67000-a9209-a903p-t0220-5-11q67000-a9243-a904p-t0220-5-12+6q67006-a9201-a901p-t0263-5-1q67000-a9209-a801p-t0220-5-1q67000-a9243-a802p-t0220-5-2 PDF

    Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT4126 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinC Contigui ation 1 2 3 Package1) SMBT4126 sC3 Q68000-A8549 B SOT-23 E C Maximum Ratings


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    smbt4126q68000-a8549ot-23fl235bq5+4q1225b00e35ti05ehp0078i01225b2 PDF

    Contextual Info: BSP 171P Inf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Features Product Summary • P Channel Drain source voltage Vbs -60 V • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS on 0.3


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    bsp171pp-sot223-4-1q67041-s4019s35bq5+6q133777sqt-89b535bq5d13377b235bg5d13377t PDF

    Contextual Info: BSO 615NV I n fin e o n technologies Preliminary Data SIPMOS Small'Signal-Transistor Product Summary Features 60 V ADSfonl 0.12 k> 3.1 u A • Dual N Channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance Continuous drain current


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    615nvq67q41-s2844s35bq5q133777+5sqt-89b535bq5d13377b235bg5g133771 PDF