CGY40 Search Results

Microwave PIN diode

Abstract: 50kRad BFY196 S microwave fet IC CGY40 krad microwave transistor bfy193 t359 BFY193 ic radiation
Contextual Info: HiRel Discrete & Microwave Semiconductors HiRel Discrete & Microwave Semiconductors Radiation Hardness Analysis/Data of Family types: family given in bracketts • CGY40: (CGY41), Side 2 • CFY66: (CFY67), Side 3 • BXY42: (BXY43, BXY44), Side 4 - 5 • BFY193: (BFY180, BFY280,

Contextual Info: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40

SIEMENS MICROWAVE RADIO 8 GHz

Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
Contextual Info: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG

siemens spc 2

Abstract: SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67
Contextual Info: HiRel Discrete and HiRel Microwave Semiconductors 1. Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Siemens. Full data sheets are also given in our HiRel Discrete and Microwave Semiconductors Data Book which is currently under generation August 1998 . They are

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

microwave transistor bfy193

Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
Contextual Info: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG

MGF1502

Abstract: CFY18 CFY13 CFY19 siemens gaas fet cfy11 CFY18-23 CFY16 CFY11 CFY14 CF930
Contextual Info: FUNKAMATEUR-Bauelementeinformation Mikrowelienbauelemente Analoge IS und N-Kanal-Feldeffekttransistoren auf Gallium-Arsenid-Basis Konvent, rechnoiog/e STATE-OF-THE-MT-T. Leuchtanzeigen, Faseropt. Komm., Bildverstärker u.a. Mikrowellentechn. Kfz-Elektronik

CFY19

Abstract: bf963 CFY19-18 CFY10 CFY76-08 gaasfets bf544 CFY67-08 CFY19-22 BF964S
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors Type M axim um Ratings A>s Pt G DS 20 20 20 20 20 12 30 50 30 30 30 30 200 200 200 200 200 200 23 25 25 25 18 20 20 20 30 30 200

CEREC

Contextual Info: SIEM ENS G a A s M M IC C G Y40 • Single-stage, monolithic microwave 1C MMIC amplifier • Application range: 100 MHz to 3 GHz • Gain: 9 dB typical, at 1.6 GHz • Low noise figure: 2.7 dB typical, at 1.6 GHz • Bandwidth: 3 GHz typical, at - 3 dB, VSWR < 2:1

marking code 016 MMIC

Abstract: RS 302 440 40 mmic marking L A444 CGY40 Q68000-A4444 mmic code marking P 18 MMIC marking code 132 MMIC marking CODE c4 MMIC marking CODE 06
Contextual Info: CGY 40 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Application range: 100 MHz to 3 GHz * Gain: 9 dB typ. @ 1.6 GHz * Low noise figure: 2.7 dB typ. @ 1.6 GHz

MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
Contextual Info: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices

CFY19

Abstract: CFY19-18 CFY19-22 BF995 BF963 CFY10 BF961 BF964S BF965 CFY65-14
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors " BF961 BF963 BF964S BF965 BF966S BF988 BF987 Triode V DS V ^DS niA Pt mW 20 20 20 20 20 12 20 30 50 30 30 30 30 30 200 200 200

CFY76-10

Abstract: CFY76-08 mw772 cfy66
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 GaAsMMICs Broadband Amplifiers/Mixers Case C h aracteristics TA=25°C Type I op / MHz 200. 1000 800. 1800 200. 1800 200. 1800 mA V CGY50 (Amp) 5.50.7.50

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise