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    X-BAND POWER TRANSISTOR Search Results

    X-BAND POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    X-BAND POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    500W TRANSISTOR

    Abstract: hvvi
    Text: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating


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    PDF HVV1011-500L on/18us HVV1011-500L EG-01-PO17X1 500W TRANSISTOR hvvi

    CHA7010

    Abstract: x-Band High Power Amplifier
    Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP


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    PDF CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier

    x-Band High Power Amplifier

    Abstract: 10Ghz RF Power 10w amplifier CHA7010
    Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP


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    PDF CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier 10Ghz RF Power 10w amplifier

    AN0020

    Abstract: CHA5014 9v23
    Text: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to


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    PDF CHA5014 CHA5014 30dBm DSCHA50140112 AN0020 9v23

    x-Band High Power Amplifier

    Abstract: CHA7012
    Text: CHA7012 X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


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    PDF CHA7012 CHA7012 DSCHA70127235 x-Band High Power Amplifier

    CHA5014

    Abstract: No abstract text available
    Text: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to


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    PDF CHA5014 CHA5014 30dBm DSCHA50149090-31

    Untitled

    Abstract: No abstract text available
    Text: CHA5014-99F RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to


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    PDF CHA5014-99F CHA5014 30dBm DSCHA50141097

    x-Band High Power Amplifier

    Abstract: 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters CHA7010
    Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


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    PDF CHA7010 CHA7010 DSCHA70103135 x-Band High Power Amplifier 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters

    CHA7010

    Abstract: x-Band High Power Amplifier x band Gaas Power Amplifier 10W
    Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


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    PDF CHA7010 CHA7010 DSCHA70102175 -24-June-02 x-Band High Power Amplifier x band Gaas Power Amplifier 10W

    C0805C225K9RACTU

    Abstract: ECJ-1VB1H103K PCC1784CT-ND R04003
    Text: HELP3TM Tri-band USCellular/Japan Cellular/IMT UMTS/WCDMA Power Amplifier Module Application Note HELP3TM Tri-band WCDMA Power Amplifier Module Rev 2 Relevant products • AWT6222 General Description This ANADIGICS 3 mm x 5 mm hetero-junction bipolar transistor HBT power amplifier module is designed


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    PDF AWT6222 C0805C225K9RACTU ECJ-1VB1H103K PCC1784CT-ND R04003

    CHA5012

    Abstract: No abstract text available
    Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


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    PDF CHA5012 CHA5012 DSCHA50126286

    99-F

    Abstract: CHA5012-99F CHA5012
    Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


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    PDF CHA5012 CHA5012 DSCHA50126286 99-F CHA5012-99F

    CHA5012

    Abstract: No abstract text available
    Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description Main Features The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


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    PDF CHA5012 CHA5012 DSCHA50126066

    Untitled

    Abstract: No abstract text available
    Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride


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    PDF CHA5012 CHA5012 DSCHA50120179

    200khz power amplifier

    Abstract: DCS1800 GSM900 PCS1900 RF3145 RF3145PCBA-41X
    Text: RF3145 RF3145QuadBand GSM/EDGE/G SM850/DCS/ PCS Power Amplifier Module QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE NC RoHS Compliant & Pb-Free Product Package Style: Module 10 mm x 10 mm 12 Features „ „ „ „ „ Integrated Power Control & Band


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    PDF RF3145 RF3145QuadBand SM850/DCS/ GSM/EDGE/GSM850/DCS/PCS 33dBm 29dBm GSM850 GSM900 DS050919 200khz power amplifier DCS1800 PCS1900 RF3145 RF3145PCBA-41X

    94GHz amplifier

    Abstract: CHA7012
    Text: CHA7012 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc Main Features Frequency band: 9.2 -10.4GHz Output power P3dB : 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface


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    PDF CHA7012 CHA7012 DSCHA70129082- 94GHz amplifier

    RFMD 7325

    Abstract: No abstract text available
    Text: DRAFT RF3145 DRAFT RF3145QuadBand GSM/EDGE/G SM850/DCS/ PCS Power Amplifier Module QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE NC RoHS Compliant & Pb-Free Product Package Style: Module 10 mm x 10 mm 12 Features „ „ „ „ „ Integrated Power Control & Band


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    PDF RF3145QuadBand SM850/DCS/ GSM/EDGE/GSM850/DCS/PCS RF3145 33dBm 29dBm GSM850 GSM900 DS050919 RFMD 7325

    S1502

    Abstract: SKY65152-11 sky65152
    Text: DATA SHEET SKY65152-11: 2.4-2.5 GHz WLAN Power Amplifier Applications Description x IEEE 802.11 b/g WLANs x ISM band transmitters x WCS fixed wireless x Wireless access nodes The SKY65152-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity,


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    PDF SKY65152-11: SKY65152-11 200968F S1502 sky65152

    4419B

    Abstract: C0805C225K9RACTU ECJ-1VB1H103K PCC1784CT-ND R04003 63Sn37Pb Sonoscan
    Text: HELP3TM Dual-band Cellular/PCS WCDMA Power Amplifier Module Application Note HELP3TM Dual-band WCDMA Power Amplifier Module Rev 3 Relevant products • AWT6221 General Description This ANADIGICS 3 mm x 5 mm hetero-junction bipolar provide optimum performance in a 50 Ω system, and


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    PDF AWT6221 4419B C0805C225K9RACTU ECJ-1VB1H103K PCC1784CT-ND R04003 63Sn37Pb Sonoscan

    D 400 F 6 F BIPOLAR TRANSISTOR

    Abstract: 41000W TACAN ASI10574 AVF400
    Text: AVF400 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI AVF400 is a NPN bipolar power transistor designed for high peak power applications such as DME/TACAN/IFF. In 1025-1150 MHz band. A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B


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    PDF AVF400 AVF400 ASI10574 D 400 F 6 F BIPOLAR TRANSISTOR 41000W TACAN ASI10574

    DCS1800

    Abstract: ECM009 EGSM900 PCS1900 GSM module circuit diagram GSM module BLOCK diagram GSM/BA5 Amplifier
    Text: PRELIMINARY DATA SHEET ECM009 3V TRI-BAND GSM POWER AMPLIFIER MODULE Applications Features 3.5V Single Supply Operation 50 Ohms internally matched for input and output High Efficiency EGSM=52%, DCS= 47% 8-pin, 6 X 6mm LGA, surface mounted module On Board band select and output power control


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    PDF ECM009 EGSM900 DCS1800 PCS1900 ECM009 900MHz, 75GHz, PCS1900 GSM module circuit diagram GSM module BLOCK diagram GSM/BA5 Amplifier

    marking code b38 SMD

    Abstract: ACPM-5038 B38 SMD Transistor a5038 ACPM-5038-TR1 TRANSISTOR SMD MARKING CODE B38 AVAGO PA LTE D 5038 transistor
    Text: ACPM-5038 LTE xGP+Band38 2545-2620 MHz 3 x 3 mm Power Amplifier Module Data Sheet Description Features The ACPM-5038 is a fully matched 10-pin surface mount module developed for LTE Band 38 and covers xGP band as well. This power amplifier module operates in


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    PDF ACPM-5038 Band38 ACPM-5038 10-pin AV02-3280EN marking code b38 SMD B38 SMD Transistor a5038 ACPM-5038-TR1 TRANSISTOR SMD MARKING CODE B38 AVAGO PA LTE D 5038 transistor

    mesfet lnb

    Abstract: NE72118 NE72118-T1 NE72118-T2 13000 transistor
    Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz • GATE LENGTH: Lg = 0.8 µm (recessed gate) 2.1 ± 0.2 • GATE WIDTH: Wg = 330 µm


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    PDF NE72118 NE72118 24-Hour mesfet lnb NE72118-T1 NE72118-T2 13000 transistor

    TRANSISTOR 5804

    Abstract: A 3120 2SC2798
    Text: MITSUBISHI RF POWER TRANSISTOR 0ni7fc,24 b32 2SC2798 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 2798 is a silicon NPN epitaxial planar type transistor designed fo r R F broad-band power amplifiers in U H F band. Dim ensions in mm C 1 .5 M A X


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    PDF 0D17h24 2SC2798 770MHz, 175MHz, TRANSISTOR 5804 A 3120