DIODE GG 14 Search Results

diode marking gg 2a

Abstract: diode gg 2a BAR63-02V gg 2a SC79
Contextual Info: BAR63-02V Silicon PIN Diode
PIN diode for high speed switching 2 of RF signals
Low forward resistance, small inductance
Very low capacitance
For frequencies up to 3 GHz 1 VES05991 Type Marking Pin Configuration Package BAR63-02V GG 1=C SC79 2=A Maximum Ratings

smd diode marking zf

Abstract: DF10SC4M smd diode marking c MTKM Diode 1_b SMD
Contextual Info: Schottky Barrier Diode Twin Diode w nnm o u tlin e DF10SC4M 4 0 V 10 A Feature • SM D • SMD • P rrsm T K ^ V S / i & S I • Prrsm Rating 1High lo Rating-Small-PKG » 'J i3 ü * S S 3 S g l Main Use • D C /D C n y i K — S> • mm. y-A.oA&gg • •

Contextual Info: Schottky Barrier Diode Single Diode W tm D5S9M OUTLINE 90V 5A Feature • Tj=150°C • Tj= 1 5 0°C • P rrsm • 71 [ Æ - J U K Rating • Full M o ld e d Main Use • S w itc h in g R eg u lator • DC/DC □ V A'—^ • D C /D C C o n ve rte r •mm, i f - A .oA d gg

st3043

Abstract: LOW-POWER SILICON NPN 40352 2N773 ST3042 bsy11 2S001 2SC859
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu

Bendix Transistors

Abstract: 2N1149 RCA 2n1184a 2N1152 2N1151 2N1150 RCA 2N1174 transitron Emihus 2N1193
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu

U860 diode

Abstract: diode U860 diode avalanche DSA U860 tc 40138 DIODE DSA 18 diode avalanche DSA VRRM 2300 DSA VRRM 2300 G DSA 908-44 A G diode avalanche DSA 603
Contextual Info: A S E A b Ro u n /abb AB seuicon D I 00MÛ3DÛ □OGOlhl 7 * T -o \- Netzdioden Vrrm 1 Diode I 1 DS Ki DSA 1 1 T yp /type 1 I I Rectifier diodes S21 - I I 1 I FAV1 400-11 KC, NC 400-14 KC, NC 400-17 KC, NC 400-20 KC, NC 400-23 KC.NC ft If s m If a v m A °C A

Newmarket Transistors

Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu

diode GG 64

Abstract: diode GG 71 AF118 Low-Power Germanium PNP ACY39 2N240 2G201 2G302 2N3604 ACY24
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 10 >= 2Gl024 2Gl024 2N2512 2N2512 2N2512 2G383 2G383 2G383 2Gl025 2Gl025 20 NKT237 ACY24 2Gl026 2Gl026 2Gl026 2G577 GT125L ACY17 ~~~g~~ 25 30 2Gl027 AF118 AF118 MA909 MA205 MA205 MA205 2N674 ~~~~~8 35 V BR CBO

Low-Power Germanium PNP

Abstract: 2N1377 2n1375 TR526 2N524A 2N3428 2n525a diode GG 64 2N1432 AC123
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 10 15 20 >= 2G524 2Nl057 2N1371 2N1375 ACY16 TRS50 TR650 TR650 2N1997 2N597 2N2382 2N524A TR43A TR43A TR43A 2G525 2G525 2G525 CK658 CKS5C 30 CK65 CK65A 2N1451 TR43 TR43 TR43 2N1447 2N526 ~~:~~ 35 40 TR461 2N237

OC139

Abstract: Low-Power Germanium NPN 2N1694 2N557 2N558 2N147 2N212 2N576 2N634 TR07
Contextual Info: LOW-POWER GERMANIUM NPN Item Number Part Number Manufacturer V BR CBO Ie Max (A) hFE (V) fT (Hz) Cobo Max (F) leBO Max (A) V(BR)CEO (V) PD Max (W) Derate at (WrC) Toper Max eC) 2.0m 100 S TO-5 2.5m 100 J 100 J 100 S 100 S 100 J 100 J TO-l TO-5 TO-22var TO-5

2SA1370E

Abstract: 2SA13600 HITACHI AXIAL DIODE diode *7723 BCY77VII
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 < 40 45 50 2SA916K 2N4930 2N4931 2N4931S 2N4931S BF723 BF870S TBF870 2N3743 BF721 BF872S TBF872 MRF5211 MRF5211l HA7520 HA7520 HA7521 HA7521 MM4008 -ecY77VIT 55 60 65 70 75 80 BCY77VII BCY77VIII

2S877

Abstract: diode GG 14 2S8370 Low-Power Germanium PNP AF201U TA269 2N270 2s875 2G108 2N404
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 10 2S843 MA899 MA899 TA269 TA269 TA269 2N404 2N1370 2N1374 2N1382 ~~~~g~A 15 20 2N1287 2N658 1340 GT20 GT20 GT83 GT83 TAM14 +~~: 25 30 TA14 TR18 TA18 TR18 2S8185 2S8111 2N249 2N291 ~~~~OU 35 -40 AF201U 2N131

KT933

Abstract: 6ae diode DTL3502 KT626D KT626A 2sa1403d kt933B KELTRON diode MXR5583 KT820V1
Contextual Info: POWER SILICON PNP Item Part Number Number I C 5 10 15 20 Manufacturer See Index See Index See Index SemiconTech SemiconTech See Index See Index See Index See Index See Index TRSP4504 TRSP4504S TRSP4505 TRSP4505S TRSP4754S TRSP4755S TRSP5014 TRSP5014S TRSP5015

rca 101m

Abstract: Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50

PS12038

Abstract: 3 phase IGBT inverter CBW20 IPM25 ic 4052 block diagram CBU 406 uvd 110
Contextual Info: PS12038 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Tentative Intellimod Module Application Specific IPM 25 Amperes/1200 Volts A D E D F G M SQ PINS H QQ PP C J VV K L 24 21 19 17 15 13 11 9 7 18 16 14 12 10 8 RR

IRFG5110

Abstract: 9437B PN channel MOSFET 10A tp 26c 437B MO-036AB KJJ 15 X1DV
Contextual Info: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS COMBINATION INI AND P CHANNEL 8 EACH] POWER MOSFETs IRFG5110 o 14 LEAD DUAL-IN-LINE QUAD (CERAMIC SIDE BRAZED PACKAGE Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs

b0239c

Abstract: diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N5000 2N5150 2N5602 2N5154 2N6717 92GU06 92PU06 B0379-16 ~~~~~ 30 SOT5513 SOT5513 SOT5913 B0379-25 2SC3474 2S01914 2S01981 SK3512 - :g~~:~ - 25 35 -40 45 -50 RCA1A03 S2N4863-2 S2N4863-3 SMl5509 SMl5514

b0349

Abstract: B0817 1/transistor b0349 to-53 2N3577 blx10 diode 300U 2S078 B0379 b0371
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 SOT5512 SOT5512 SOT5912 B0377-25 2S01083 2S0975 B0321 B0321 ~g~~~ 25 30 2S01779 2N3138 2N3140 2N3142 2N3144 BOY11 BOY11 2S012A ~~~1~8U 35 40 BSS15 2N5320 NS06178 2N6179 S2N4150 S2N4150-1 BOB29-10 BOB29-6

nkt270

Abstract: Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801
Contextual Info: LOW-POWER GERMANIUM PNP Item Number . Part Number V BR CBO 5 10 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 2G396 ~~~~~ 15 20 -25 30 -35 40 2G303 2G303 2G303 2N801 2N802 2N426 2N1171 2N1017 NKT224 2G382 2G382 NKT221 NKT228 NKT303 2N623 TI385

044H11

Abstract: KT808B 044H10 kt808BM BJG 36 kt808 2s021 B0313 2n1810
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 SOT7S09 SOT7S09 2N3714 B0245B B0245B B0245B B0313 2S041 ~~~g~ 25 30 ST28143 2SC1115 2SC1115 OTL3203 SOT3207 SOT3207 SOT3207 2N500S ~~~~n 35 40 2N5S24 2N5730 2N4301 2NS128 BOY91 BOS11 GSDB10008 SOT701S

bcy591x

Abstract: 2N6429A 2N2196 2N2147 2N2214 2N2161 2SC538A BCW66RG 2N2207 BC521
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18

AF306

Abstract: 2n2654 AF178 Low-Power Germanium PNP AF186 2N3283 2N2672 2N77 GG10M 2N2929
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 2N1524 2N1426 2N1426 2N1526 2N1527 AF147 AF150 AF148 AF200 2N77 ~~Jg~ 15 20 AF306 2S8188 2N612 2N59 2N60 2N61 2N613 2N1561 ~~~~~~ 25 30 35 40 2N1692 2N1693 2N672 2N673 2N402 2N403 2N700 2N700A 2N3283 2N3284

OC140

Abstract: 2S0187 SK3011 Low-Power Germanium NPN TR182 2N43 2S030 2n357a ASY73
Contextual Info: LOW-POWER GERMANIUM NPN Item Number Part Number Manufacturer Y BR CBO hFE (V) Ic Max (A) fT (Hz) C bo Max (F) ICBO Max V(BR)CEO Po Max (A) (V) (W) Derate at (WrC) Tope, 2.5m 2.8m 2.5m 100 J 75 J 75 J 100 J 1.lm 4.0m 2.5m 2.0m 60A 75 A 100 J 100 J 100 J TO• 1

2N2614

Abstract: 2N1396 33 16U Low-Power Germanium PNP 2N384 2N295 2N2957 2N2956 ACY20 2G413
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 5 • 10 2SA103 2N2797 2N2797 2N2797 MA891 MA891 2N1125 PTC102 NKT240 2G386 15 20 · 25 30 2N1395 2N1396 40005 2N1397 40006 2N59A NKT241 2N1699 ~~~~~9 2SA104 2Nl177 2G413 2G413 2G413 2G403 2N2614 NKT603F ACY30