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    2N240 Search Results

    2N240 Datasheets (117)

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    2N240
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 65.75KB 1
    2N240
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 99.33KB 1
    2N240
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 89.45KB 1
    2N240
    Unknown Vintage Transistor Datasheets Scan PDF 46.71KB 1
    2N240
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 38.96KB 1
    2N240
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 54.23KB 1
    2N240
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.2KB 1
    2N240
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 157.92KB 1
    2N240
    Unknown GE Transistor Specifications Scan PDF 38.14KB 1
    2N240
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 140.68KB 1
    2N240
    Sprague Semiconductor Data Book 1977 Scan PDF 73.72KB 1
    2N2400
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 79.72KB 1
    2N2400
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 107.37KB 1
    2N2400
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 116.06KB 1
    2N2400
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 95.63KB 1
    2N2400
    Unknown Vintage Transistor Datasheets Scan PDF 50.24KB 1
    2N2400
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 38.96KB 1
    2N2400
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 88KB 1
    2N2400
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 50.94KB 1
    2N2400
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 157.88KB 1
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    2N240 Price and Stock

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    Walsin Technology Corporation 0402N240G500CT

    CAP CER 24PF 50V C0G/NP0 0402
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    Mouser Electronics () 0402N240G500CT 53
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    Bristol Electronics 0402N240G500CT 157,496 186
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    Walsin Technology Corporation 0402N240J500CT

    CAP CER 24PF 50V C0G/NP0 0402
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    0402N240J500CT 3,199
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    TME 0402N240J500CT 10,000
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    Abracon Corporation ABM12N-24.0000MHZ-8-B1U-T3

    CRYSTAL 24.0000MHZ 8PF SMD
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    Mouser Electronics () ABM12N-24.0000MHZ-8-B1U-T3 800
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    ABM12N-24.0000MHZ-8-B1U-T3 700
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    Braemac Americas-Symmetry ABM12N-24.0000MHZ-8-B1U-T3 1
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    Central Semiconductor Corp 2N2405-PBFREE

    TRANS NPN 90V 1A TO-39
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    DigiKey 2N2405-PBFREE Bulk 385 1
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    CTS Corporation 532N24020ITT

    5.0mm x 3.2mm Surface Mount Clip
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    DigiKey 532N24020ITT Tape & Reel 1,000
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    Avnet Americas 532N24020ITT Tape & Reel 12 Weeks 1,000
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    2N240 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n2405

    Abstract: 2N1893
    Contextual Info: 4302271 üün7ô3 4 HHAS P o w e r Tran sistors File N u m b e r 34 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 I ' 3 3 - 0 5 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p p lic a tio n s In In d u strial and C o m m e rc ia l E q u ip m e n t


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    2N1893, 2N2405 2N1893 2N2405* 2N2405. 10VOLTS 2n2405 PDF

    2N2405

    Contextual Info: 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. • For Operation at Junction Temperature up to 200°C 0.89 max.


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    2N2405 20MHz 2N2405 PDF

    2N2405

    Abstract: transistor 1150
    Contextual Info: 2N2405 Medium Power Silicon N-P-N Planar Transistor. 11.50 Transisto. 1 of 1 Home Part Number: 2N2405 Online Store 2N2405 Diodes M edium Po w er Silic o n N- P- N Planar Trans is to r. Transistors Enter code INTER3 at


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    2N2405 com/2n2405 2N2405 transistor 1150 PDF

    Contextual Info: 2N2404 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60â V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.40 h(FE) Max. Current gain.120


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    2N2404 Freq150M PDF

    Contextual Info: 2N2402 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)18 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)1.5u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.60 h(FE) Max. Current gain.


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    2N2402 Freq250M PDF

    Contextual Info: 2N2400 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)7.0 V(BR)CBO (V)12 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)3.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.30 h(FE) Max. Current gain.


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    2N2400 Freq150M PDF

    Contextual Info: 2N240 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V) I(C) Max. (A)25m Absolute Max. Power Diss. (W)10m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)3.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.17Â h(FE) Max. Current gain.


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    2N240 Freq30M PDF

    Contextual Info: m 2N2405 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2405 is Designed for General Purpose Amplifier, and Switching Applications. MAXIMUM RATINGS 1.0 A lc 90 V V ce P d is s 1.0 W @ TA = 25 °C P d is s 5.0 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C


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    2N2405 2N2405 PDF

    2N2405

    Contextual Info: 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. • For Operation at Junction Temperature up to 200°C 0.89 max.


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    2N2405 O-205AD) 2N2405 PDF

    Contextual Info: 2N2405 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2405 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE


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    2N2405 2N2405 150mA, 150mA 20MHz PDF

    Contextual Info: 2N2403 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60â V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.20 h(FE) Max. Current gain.60


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    2N2403 Freq150M Code3-12 PDF

    2N2405

    Abstract: C2035
    Contextual Info: ÀSII 2N2405 SILICON NPN TRANSISTOR DESCRIPTION: The 2N2405 is Designed for General Purpose Amplifier, and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 1.O A Vc e 9O V pd is s 1.O W @ Ta " 25 0C pd is s 5.O W @ Te " 25 0C Tj -65 0C to +2OO 0C


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    2N2405 2N2405 C2035 PDF

    2SC1018

    Abstract: sk3024 2S01664 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718
    Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2N3444 ZTX451 2N2404 2N2404 2N3818 2SC777 ZTX452 2SC1517AK :iK3024 SK3024 ZTX453 PTC144 2S01005 2S01005 B2-8Z B3-12 S01574 40450 ~~9~~0 35 40 TP3253 2N3253 BFX51 BFX61 BlY14 2SC140 TP3252


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    2S01280 2SC1568 2SC1518 ZTX449 2S01664 2S01225M 2SC1018 sk3024 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718 PDF

    Contextual Info: ., fine. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) FEATURES • For Operation at Junction Temperature up


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    2N2405 300jis 20MHz PDF

    germanium transistor pnp

    Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
    Contextual Info: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies


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    WiOO/25A 2N240 uG-491A/U, MIL-S-19500/25B 15SUE. 10UAL germanium transistor pnp GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c PDF

    2SA144

    Abstract: 2N2416 Low-Power Germanium PNP 2G309 OC45 2SA144 to-92s GT1606 ac107
    Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number -10 TR64 2N964A GT1606 GT1606 2SA156 OC45 2SA201 NKT143 NKT144 OC43N ~~~~g 15 20 2G345 2G345 2N2401 2N779 2N779A MA113 MA113 MA116 ~~~d: 25 30 NKT261 NKT271 2SA202 2SA202 2N606 2SA160 AC107 AC107 ~~~~1 35 40


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    O-22var 2SA144 2N2416 Low-Power Germanium PNP 2G309 OC45 2SA144 to-92s GT1606 ac107 PDF

    2N2405

    Abstract: 2N1893 transistor KD 503 RCA-2N2405 kd 503 transistor TA2235A RCA-ZN1893 TA2235
    Contextual Info: G E SOLID STATE 3875081 □ 1 G E S O LI D S TAT E DE I 3Ö7SDÖ1 GD17CHE 5 | ~ 01E 17092 D -T -2 J-Z 3 _mgn-speea rower Transistors File N u m b e r 3 4 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p plic a tio n s


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    RCA-ZN1893 2N2405* RCA-2N2405 2N1893 2N2405 2N240S. transistor KD 503 kd 503 transistor TA2235A TA2235 PDF

    2N2405

    Abstract: IN 5358
    Contextual Info: 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. • For Operation at Junction Temperature up to 200°C 0.89


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    2N2405 O-205AD) 2N2405 IN 5358 PDF

    Contextual Info: 2N2401 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)15 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)1.5u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.50 h(FE) Max. Current gain.


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    2N2401 Freq200M PDF

    Contextual Info: 2N2405 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)150m


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    2N2405 PDF

    Contextual Info: 2N2405S Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2N2405S PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    2n3053A complementary

    Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
    Contextual Info: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697


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    a00S72b 2N2102 2N4036 120MHz 2N697 2N1613 2N3053 2N2270 T0205AD/ 2N3053A 2n3053A complementary 40362 BUX40A 40319 2n4314 2N1893 PDF

    Contextual Info: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE­ max


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    bDT17Ã T-27-01 2N4036 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B PDF