2N41 Search Results

2N4117

Contextual Info: 2N4117 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N4117 The 2N4117 is an Ultra-High Input Impedance N-Channel JFET The 2N4117 provides ultra-high input impedance. The device is specified with a 10-pA limit and is ideal for use as a high-impedance sensitive front-end amplifier.

hFE-200 to-92 npn

Abstract: 2N4123 2N4124 2N4125 2N4126
Contextual Info: 2N4123 _ 9N4194_ PHILIPS INTERNATIONAL SbE D • 711002b D042bb2 T3T ■ PHIN -= I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in pla stic T O -9 2 envelopes, p rim a rily intended fo r low -pow er, sm all-signal a u d io ­ fre qu e n cy a p p lica tio n s fo r consum er service.

Contextual Info: 2N4126 PNP SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • For General Purpose Switching and Amplifier Applications Especially Suitable for AF Driver and Low Power Output Stages E A TO-92 B Mechanical Data • • • • C Case: TO-92, Plastic

a5t4123

Abstract: 5t41
Contextual Info: TYPES 2N4123, 2N4124, A5T4123. A5T4124 N-P-N SILICON TRANSISTORS Î B U L L E T IN N O . D L -S 7 3 1 1 4 7 1 , N O V E M B E R 1 9 7 1 - R E V I S E D M A R C H 1973 S IL E C T t T R A N S IS T O R S * D E S IG N E D F O R G E N E R A L PUR PO SE S A T U R A T E D S W IT C H IN G

Contextual Info: DIGITRON SEMICONDUCTORS 2N4167-2N4174 SILICON CONTROLLED RECTIFIERS MAXIMUM RATINGS Rating Symbol Peak repetitive forward and reverse blocking voltage 2N4167 2N4168 2N4169 2N4170 2N4172 2N4174 Forward current RMS Value 25 50 100 200 400 600 VDRM, VRRM IT RMS

SST4118

Abstract: 2N4117A 2N4118A 2N4119A PN4117A PN4118A PN4119A SST4117 SST4119
Contextual Info: 2N/PN/SST4117A Series Vishay Siliconix N-Channel JFETs 2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 4117 –0.6 to –1.8 –40 70 30 4118 –1 to –3

TO111

Abstract: TO61 U 114
Contextual Info: G27 ELECTRONICS, INC. \ -15 COLLECTOR CURRENT = 10 AM PS NPN TYPES— ConWnued C ue VCBO Volt 2N3920 2N4070 2N4071 2M 150 JAN 2N4150 JT X • ÎN4150 2N4301 2N4347 2N4348 2N5006 T O -3 T O -3 T O -3 T O -5 T O -5 120 120 200 100 100 60 100 150 80 80 6 8

2N4124 MOTOROLA

Abstract: 2N4123 MOTOROLA 2N4124 2N4123
Contextual Info: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

2N4123

Abstract: 2N4124 2N4123 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

Contextual Info: Lf5E D ITOS H ^0^7250 001775^ 0 TOSHIBA TRANSISTOR 2N4126 SILICON PNP EPITAXIAL TYPE PCT PROCESS 'T TOSHIBA (DISCRETE/OPTO) Unit in mm FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcBO=“50nA(Max.) @ VcB*-20V

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50

Contextual Info: 2N4150 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)

Contextual Info: 2N4150 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)

GES2222A

Abstract: NPN switching transistor 2N4403 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A G E Device b v CEO V C E sa t E Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300

ZTX3705

Abstract: 945 MOTHERBOARD CIRCUIT diagram MPS3693 ZTX108 BCY59P MPS3704 MPS3705 MPS6532 VC30 ZTX238
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - continued Type MPS3704\ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 MPS3706\ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P MPS3709\ ZTX3709 / MPS3710\ ZTX3710 / MPS3711 \ ZTX3711 f

2n5226

Abstract: 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

2N4250

Abstract: t0106 2N4142 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260
Contextual Info: 0258354 ADVANCED SEMIC C IS l ^ o k l " Jcnj,v',t a d v a n ce d Ü D Ë TRANSISTORS 1 Po @ T c = 2 5 ° C DEVICE TYPE NO. 2N4142 2N4143 2M4150 2N4207 2N4208 2N4209 2N4210 2N4227 2N4228 2N4231 2N4232 2N4233 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4248

SRK-2001

Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

2N3903

Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300

2N4119

Abstract: 2n4117 2N4118 2N4117A 50117 2n4119a 2n4117 jfet 2N4118A
Contextual Info: 2N4117-19, 2N4117A-19A N-Channel JFET FEATURES • Low Leakage — I g g s ^ ^ • Low Capacitance PIN CONFIGURATION CrsS< 1 . 5 p F TO-72 ABSOLUTE MAXIMUM RATINGS @ 2 5 ° C unless otherwise noted M axim um Temperatures Storage Tem perature - 6 5 ° C to + 2 0 0 ° C

ZTX502

Abstract: BC17 MPS3645 BCY59P MPS3693 MPS3704 MPS3705 MPS6532 VC30 ZTX238
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - continued Type M P S 3704 \ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 M P S 3706 \ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P M P S 3709 \ ZTX3709 / M P S 371 0\ ZTX3710 /

2N4123

Abstract: 2N4123RLRM 2N4124 2N4124G
Contextual Info: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage Value VCEO 2N4123 2N4124 Collector−Base Voltage Vdc 30 25 VCBO 2N4123

SOT-23 ZF

Abstract: 2N4126 SOT-23 Mark ZF 2N3906 MMBT4126
Contextual Info: 2N4126 MMBT4126 C E C TO-92 BE SOT-23 B Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Sourced from Process 66. See 2N3906 for

2n3904 npn fairchild

Abstract: 2N3904 2N4124 MMBT4124 2n3904 sot 23 SOT23B
Contextual Info: 2N4124 MMBT4124 C E C TO-92 BE SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904