2N115 Search Results

2n1150

Abstract: 2N1152 ir 0948 2N1151 2N1149 transistor kt 925 2N1153 2NM50
Contextual Info: TYPES 2N1149 THRU 2N1153 N-P-N GROWN-JUNCTION TRANSISTORS B U L L E T I N N O . D L - S 6 9 2 2 3 7 , D E C E M B E R 1 9 6 1 - R E V I S E D A P R I L 1969 Oval Welded Package nw ch anical d a ta The transistor is in an oval welded package with glass-to-metal hermetic seal between case and leads.

2N1151

Contextual Info: 2N1151 Si NPN Lo-Pwr BJT 8.21 Transistors Transistors Bipolar Si NPN Low-Power Bi. Page 1 of 1 Enter Your Part # Home Part Number: 2N1151 Online Store 2N1151 Diodes Si NPN Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

Contextual Info: 2N1153 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1154 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)50 I(C) Max. (A)60m Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150 I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1150 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1152 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1158 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20â V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)60m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N1151 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N1156

Abstract: 2N1154 2N1155
Contextual Info: TYPES 2N1154, 2N1155, 2N1156 N-P-N GROWN-JUNCTION SILICON TRANSISTORS B U L L E T IN NO . D L -S 6 8 2 2 6 9 , J A N U A R Y 1 9 6 2 -R E V IS E D M A Y 1968 FORMERLY TYPES 951, 952, AND 953, RESPECTIVELY m echanical d a ta T h e t ra n s is to r is in a n o v a l w e ld e d p a c k a g e w ith g la s s -t o -m e t a l h e rm e tic s e a l b e t w e e n c a s e a n d le a d s.

TRANSISTORS BJT list

Abstract: 2N1154
Contextual Info: 2N1154 Si NPN Lo-Pwr BJT 8.88 Transistors Transistors Bipolar Si NPN Low-Power Bi. Page 1 of 1 Enter Your Part # Home Part Number: 2N1154 Online Store 2N1154 Diodes Si NPN Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

Contextual Info: 2N1156 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)40m Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)8.0u @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

asz21

Abstract: AF117 AF114 OC170 Low-Power Germanium PNP GT346B 2G381 2SA239 2n2398 s100
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 • 15 20 25 · 30 35 40 45 50 55 60 2N1158 2N615 2N2966 2N1158A 2SA239 2SA239 2N3399 2SA434 2SA435 2N1744 2N1747 2N1745 2N1868 2N1743 2N1742 2N1746 2N38 2N680 GT758 TR758A TR758A TR758A 2N578 2N1343 ASY50

Contextual Info: 2N1158A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20â V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)75m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N1155 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)80 I(C) Max. (A)50m Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150 I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N1011

Abstract: 2N1159 2N251a 2N1136 2N1537 N1137 Germanium power
Contextual Info: germanium power transistors 147 See Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 3.0 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER V eB VeE VEB VeE Ie (A) Min. Max. V eB rnA 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136

2N4048

Abstract: pnp germanium to36 2N2156 2N4050 T1809 germanium 2N2152 2N2359 TO36 2N4053
Contextual Info: 59 GERMANIUM POWER TRANSISTORS C U R R E f JT G A IN SA T U R A T IO M V O LT A G ES @> @ TYPE N U M BER C A SE T YPE VCBO V V CEO V C ER V V EBO V 30 AM P GE 3MAN UM P VIP V C ES V M IN . hl:E | M AX. V CE V I 'c A V C E s V BE(s> V I V ’c A 'b I A Observe (—) Negative Polarity

2N1203

Abstract: pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N173 2N511
Contextual Info: m . •■_ Môb^EMb 0000213 7 ^ ;3 3 " ° ¡ H J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d g e rm a n iu m pow er tra n sisto rs T»P» Polarity Power Dissipation

2N1384

Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
Contextual Info: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2N555

Abstract: Germanium power 2N554 2N176 2N553 2N242 2N257 DRAWING 2N257 2N307 2N250
Contextual Info: germanium power transistors _ T03/ See Pg. 147 for outline d 144 -~-~~-~~- -~ PNP ALLOY TRANSISTORS .42Amp BREAKDOWN VOLTAGES TYPE NUMBER VCB 2N234A 2N235B 2N255A 2N256A 2N257 2N285A 2N285B 2N399 2N401 2N419 2N554 -25 -50 -15 -30 -40

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

pnp germanium to36

Abstract: MP2400B 2N575A 2N5694 2N2156 2N575 2N1518 2N2728 TO36 package germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C - -10 6~~~ - MP110B 2N1166 2N1167 SDG606 MP1077 2N1166A 2N1167A 2N575 15 20 - ~~:gA 25 30 2N575A 2N514A NKT501 NKT503 2N1519 ADY26 ADY26 COTt076 ~~~g~~ -35 40 2N2638 CTP3545 MP2100A MP2100A MP2100B SOO607 2N1652

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200