BAV 56 Search Results

2N2369 SOT-23

Abstract: BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A
Contextual Info: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast

diode marking w8

Abstract: diode a7 Diode Marking z3 SOT-23 DIODE marking W4 38 Diode BAW 62 marking A7 diode baw 92 BAW 62 SOT23 diode marking e8 diode marking a4
Contextual Info: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast

BAV70

Abstract: BAV74 BAV99 BAW56 BZX84-C2V7 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 BZX84-C4V3
Contextual Info: SOT-23 TA B LE 5 - SILICO N PLANAR HIGH SP EED SW ITCHIN G DIODES Devices in th is table are suitable for high-speed sw itch in g and high frequency applications. Ratings and Characteristics at 25 °C ambient temperature. Description Type BAV70 BAV 74 BAV99

diode a7

Abstract: SOT 23 A7 diode SOT-23 a1 diode D5 marking SOT23 A7 A7 DIODE marking NB SOT-23 A4 marking diode marking A7 diode diode marking a4
Contextual Info: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

MBM29F400BA-90-V

Contextual Info: FLASH MEMORY 4M 512K x 8/256K x 16 BIT MBM29 F400TA-90-v -12-v/M BM29 F400B A-90-v-12-v • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

2907A PNP bipolar transistors

Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

transistors BC 543

Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

transistor BC 245

Abstract: transistor bc 241 transistor BC 56 transistor BF 245 transistor bc 33 BC 114 transistor transistor bf 179 transistor BC-245 TRANSISTOR BC 181 bc 162 transistor
Contextual Info: Summary of Types SIEMENS ICs for Satellite Receivers Page Type Function TDA 6130-5X4 2-GHz Mixer 22 TDA 6140-5X TV SAT IF-FM-Demodulator 30 TDA 6142-5X FM-Demodulator for SAT TV with Switchable Input 38 TDA 6151 -5;5X Satellite-Video IC 48 TDA 6160-2S Multistandard Sound IF

LR4802

Abstract: LR4087 alarm SL DIALER LR3441 Diode SY 356 lh5045 LR3463 LH5006A LR48232 LCD CHARACTER CODE LH5003
Contextual Info: Product Lineup Product Lineup • Gate Arrays/Standard Cells 1 Gate Arrays P ro cess S eries LZ93 LZ95 CMOS F eatu re G ates High speed D esign rule Delay time Supply voltage O utput current V(TYP.) mA(MAX.) Page 300-5000 1.6 ,«m ns/gate * 1.7 5 4 41 300-10000

YJ 1100 6

Abstract: scr 9117 Inverter YEC
Contextual Info: CY7C9115 CY7C9116/CY7C9117 CYPRESS SEMICONDUCTOR Features • Fast — 35-ns worst-case propagation delay, I to Y • Low power CMOS — I c c max. at 10 MHz = 145 mA (commercial) — I c e (max. static) = 68 mA (commercial) CMOS 16-Bit Microprogrammed ALU

AEG T 25 N 1000

Abstract: MT3301 AEG T 218
Contextual Info: A E G CORP 1?E D OOSTMEb QQGTbQl T S 518 T TiHiiPlUlKllKiKl electronic Creative Technoíogtes Silicon NPN Power Transistor 7 - 2 1 - 0 *? A p p lica tio n s: Sw itching mode power supply Features: • In tripple diffusion mesa technique ' Short sw itching times

BC 245 C

Abstract: BC 245 6130-5X4 tda 5410 TDA6170X Q62702-F1250
Contextual Info: List of Types in Alphanumerical Order SIEMENS Type Ordering Code Page Type Ordering Code Page BA 595 Q62702-A952 160 BC 849 CW Q62702-C2311 189 BAR 64 Q62702-A1041 173 BC 850 B Q62702-C1885 181 BAR 64-04 Q62702-A1010 173 BC 850 BW Q62702-C2312 189 BAR 64-05

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

BAX12

Abstract: BAY85S MARKING D53 marking IAY marking JB diode BAV70 BAV74 BAW56 BAT18DK Thomson-CSF diodes
Contextual Info: general purpose and switching diodes 1* diodes d'usage général et de com m utation Types •f AV VF @ lF |R @ V R V RM* (V) (mA) max (V) (mA) max (nA) (V) BAL74 50 70 1 100 100 50 BAL 99 70 70 1,3 100 2500 70 BAR 74 SD 914 BAS 16 SD BAX12 50 75 75 90(3)

Contextual Info: S3A thru S3M SURFACE MOUNT GLASS PASSIVATED RECTIFIERS CILICON RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes FEATURES SMC • G la s s p a s s iv a te d ch ip • F o r su rfa ce m o u n te d a p p lic a tio n s • Lo w re ve rse le a ka g e c u rre n t

Contextual Info: SK25DGDL12T4 T CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter,Chopper OJ:9 <J <JY; OH:9 =' P BQ RJA -%2&'' ,.8& */'& '5& /E/&1 =' P BQ UVSW RJ <JY;P C F <J%,+A .5 P @ +' =[ Diode - Inverter,Chopper SEMITOP 4 3-phase bridge rectifier +

Infineon technology roadmap for mosfet

Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
Contextual Info: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.