850W Search Results

Contextual Info: HIGH-POWER GaAlAs IR EMITTERS OD-850W FEATURES • High optical output • 850nm peak emission • Hermetically sealed TO-46 package • Wide emision angle to cover a large area All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Caps are

Contextual Info: Europe: +49 / 7731 8399 0 | Email: info@meder.com Item No.: USA: +1 / 508 295 0771 | Email: salesusa@meder.com Asia: +852 / 2955 1682 | Email: salesasia@meder.com 9112711084 Item: MK11-1A66B-850W Preliminary Datasheet Magnetic properties Pull in Test equipment

Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS OD-850WHT FEATURES • Extended operating temperature range • No internal coatings • No derating or heat sink required to 80°C • Standard 2-lead TO-46 hermetic package All surfaces are gold plated. Dimensions are nominal

850W

Abstract: MAPR-001011-850S00
Contextual Info: MAPR-001011-850S00 Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10µs Pulse, 1% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration

Contextual Info: Coaxial Voltage Controlled Oscillator Wide Band ZX95-850W+ 400 to 850 MHz Features • high power output, +10dBm typ. • low phase noise • low pushing • protected by US patent 6,790,049 CASE STYLE: GB956 Applications Connectors Model Price Qty. •r&d

ROS-850W-119

Contextual Info: Voltage Controlled Oscillator Typical Performance Data ROS-850W-119+ Frequency and Tuning Sensitivity Power Output 1200 FREQ. @ -55°C FREQ. @ +25°C 45 14 40 13 Output Power dBm Frequency (MHz) T.SENS @ +25°C 900 35 800 30 700 25 600 20 500 15 400 10 7

ZX95-850W

Contextual Info: Voltage Controlled Oscillator Typical Performance Data ZX95-850W+ Frequency and Tuning Sensitivity Power Output 1200 FREQ. @ -55°C FREQ. @ +25°C 45 14 40 13 Output Power dBm Frequency (MHz) T.SENS @ +25°C 900 35 800 30 700 25 600 20 500 15 400 10 7 300

ZX95-850W

Contextual Info: Coaxial Voltage Controlled Oscillator Wide Band ZX95-850W+ 400 to 850 MHz Features • High power output, +10dBm typ. • Low phase noise • Low pushing • Protected by US patent 6,790,049 CASE STYLE: GB956 Applications Connectors Model Price Qty. • R&D

SA002

Contextual Info: Europe: +49 / 7733 9487 0 | Email: info@meder.com USA: +1 / 508 539 0002 | Email: salesusa@meder.com Asia: +852 / 2955 1682 | Email: salesasia@meder.com Artikel Nr.: 9112711084 Artikel: MK11-1A66B-850W MK11-1A71B-850W Magnetische Eigenschaften Anzug Prüfmittel

BC850AW

Abstract: BC847W BC846AW BC846BW BC846W BC848W BC849W BC850BW BC850W
Contextual Info: BC846W~850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications SOT-323 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W 850W VCBO 80 50

867 905 352

Abstract: ROS-850W-119
Contextual Info: Voltage Controlled Oscillator Typical Performance Data ROS-850W-119+ V TUNE FREQUENCY POWER OUTPUT TUNE SENS MHz/V (MHz) (dBm) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0

ROS-850W-119

Abstract: 10 8457 096 002 913 PL-012 ROS-850 roS85
Contextual Info: Surface Mount Voltage Controlled Oscillator Wide Band ROS-850W-119+ 400 to 850 MHz Features • High power output, +10 dBm typ. • Low phase noise • Low pushing • Aqueous washable CASE STYLE: CK605 PRICE: $ 24.95 ea. QTY 5-49 + RoHS compliant in accordance

BC 620

Abstract: 847BW 846BW 850CW
Contextual Info: BC 846W . BC 850W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 NPN Power dissipation – Verlustleistung 200 mW

Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS OD-850WHT FEATURES • Extended operating temperature range • No internal coatings • No derating or heat sink required to 80°C • Standard 2-lead TO-46 hermetic package All surfaces are gold plated. Dimensions are nominal

C2335

Abstract: Q62702-C2335 bc 3as 856W C2298 bc 750 C2292 C2303 marking 2 AW marking code aw
Contextual Info: PNP Silicon AF Transistors BC 856W . BC 860W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W NPN

Contextual Info: SSPA SSPB BUC AWMA-C SSPBM-C TT series TT series 700W/850W/1KW C-Band Hubmount SSPA/ SSPB TM SapphireBlu UltraLinearTM SuperWidebandTM Super Compact TT Series GaN Technology 5.850-7.025GHz Features •            Full range of output power of 700W to 1000W in a compact

ROS-850W-119

Abstract: 10 8457 096 002 913
Contextual Info: Surface Mount Voltage Controlled Oscillator Wide Band ROS-850W-119+ 400 to 850 MHz Features • High Power Output, +10 dBm typ. • Low Phase Noise • Low Pushing • Aqueous washable CASE STYLE: CK605 PRICE: $ 24.95 ea. QTY 5-49 + RoHS compliant in accordance

Contextual Info: HIGH-POWER GaAlAs IR EMITTERS OD-850W FEATURES • High optical output • 850nm peak emission • Hermetically sealed TO-46 package • Wide emision angle to cover a large area All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Caps are

Contextual Info: MAPR-001011-850S00 Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10µs Pulse, 1% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration

Contextual Info: Coaxial Voltage Controlled Oscillator Wide Band ZX95-850W+ 400 to 850 MHz Features • High Power Output, +10 dBm typ. • Low Phase Noise • Low Pushing • Protected by US patent 6,790,049 CASE STYLE: GB956 Applications Connectors Model Price Qty. •R&D

867 905 352

Abstract: ZX95-850W
Contextual Info: Voltage Controlled Oscillator Typical Performance Data ZX95-850W+ V TUNE FREQUENCY POWER OUTPUT TUNE SENS MHz/V (MHz) (dBm) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0

transistors BC 848

Abstract: VSO05561 21E sot
Contextual Info: BC 846W . BC 850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856W, BC 857W, BC 858W 2

ACE102

Contextual Info: CAR0948TN 850W Switched Mode Rectiier CAR0948TN recitifer > High power density 1160W/l yields more space for revenue generating equipment > Wide AC input range for worldwide installation requirements > Wide temperature operation for installation in harsh outdoor environments

Contextual Info: Surface Mount Voltage Controlled Oscillator Wide Band ROS-850W-119+ 400 to 850 MHz Features • high power output, +10 dBm typ. • low phase noise • low pushing • aqueous washable CASE STYLE: CK605 PRICE: $ 24.95 ea. QTY 5-49 + RoHS compliant in accordance