183W Search Results

BFR183W

Contextual Info: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

ZL 58

Contextual Info: BFP 183W NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: Super Ultra Wideband Amplifier 50Ω ZVA-183W+ 0.1 to 18 GHz Features • Wideband, 0.1 to 18 GHz • High IP3, 36 dBm typ. • High power output, +26 dBm • High flat gain, 27±2 dB typ. Model No. Case Style Connectors Price Qty. Applications • Radar and military

Contextual Info: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration

Contextual Info: BCR 183W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R-| = '\0kQ, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 183W WMs Q62702-C2276 1= B Package 2= E 3=C SOT-323

VSO05561

Abstract: marking WMs
Contextual Info: BCR 183W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2 =10kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 183W WMs Pin Configuration 1=B 2=E Package

1117G

Abstract: Q62702-F1493 GMA marking IC456
Contextual Info: BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Q62702-F1503

Contextual Info: SIEMENS BFP.183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1503 1 =E o BFP 183W N II ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: Super Ultra Wideband Amplifier 50Ω ZVA-183W+ 0.1 to 18 GHz Features •฀Wideband, 0.1 to 18 GHz •฀High IP3, 36 dBm typ. •฀High power output, +26 dBm •฀High flat gain, 27±2 dB typ. Model No. Case Style Connectors Price Qty. Applications •฀Radar and military

Contextual Info: Super Ultra Wideband Amplifier 50Ω ZVA-183W+ 0.1 to 18 GHz Features • Wideband, 0.1 to 18 GHz • High IP3, 36 dBm typ. • High power output, +26 dBm • High flat gain, 27±2 dB typ. Model No. Case Style Connectors Price Qty. Applications • Radar and military

C2276

Abstract: Q62702-C2276
Contextual Info: BCR 183W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 = 10kΩ, R2 = 10kΩ Type Marking Ordering Code Pin Configuration BCR 183W WMs 1=B Q62702-C2276 Package 2=E 3=C SOT-323 Maximum Ratings

Q62702-F1503

Abstract: marking 17 sot343 ZL 58
Contextual Info: BFP 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

183W

Abstract: ZVA-183W
Contextual Info: Super Ultra Wideband Amplifier 50Ω ZVA-183W+ 0.1 to 18 GHz Features • • • • Wideband, 0.1 to 18 GHz High IP3, 36 dBm typ. High power output, +26 dBm High flat gain, 27±2 dB typ. Model No. Case Style Connectors Price Qty. Applications • •

VSO05561

Contextual Info: BFR 183W NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

Contextual Info: ★QPL ★ Series 2150 ^ P r o V^? Molded Unshielded RF Coils M S905422150-Û0K 2150-01K 2150-02K 2150-03K 2150-04K 2150-05K 2150-06K 2150-07K 2150-08K 2150-10K 2150-12K 2150-14K 2150-16K LEAP' SIZE- 2 3 4 5 6 7 8 9 10 11 12 13 SERIES 2150 PHENOLIC CORE LT4K

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

Contextual Info: HDA800S-C 8” ,SVGA 800 X600 , TFT Color Graphics ,White LED Backlight Dimensional Drawing RECOMMENDED CONNECTOR : MOLEX 0541324062 NOTE : FOR MORE DETAILS SEE NEXT PAGE Features Features Viewing degrees

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

RY 192

Abstract: CFY19 NTSC Decoders working principle of tv receiver CCIR Report 624-2 TDA4555 TDA8708 colour 21 cathode ray tube 128MR
Contextual Info: Philips Semiconductors Application Note Digital interfaces for component video signals AN ETV/IR89126 Author: A. H. Nillesen Several coding parameters have to be specified for interconnecting the digital component video signals YD, UD and VD between several

lmg5040

Abstract: lmg5040xufc 1G5042XUFC
Contextual Info: HITACHI/iOPTOELECTRONICS blE J> 44^205 D 0 1 2 b 02 3 T7 « H I T M Hi L' 1G5042XUFC LMG5040XUFC) T 'V Z '3 9 LMG5040XUFC — Built in DF signal generation pin 7 Not Connected FEATURES • ■ ■ ■ ■ OPTICAL DATA 640(W )x 480(H) dot CFL backlit type

Contextual Info: Special Order Products RO ASSOCIATES Custom and semi-custom converters are available for high volume OEM applications. The MicroVertef technology has been expanded to provide higher power modules and non-standard output voltage and current combinations. The products listed below