ZVN1409 Search Results

ZVN1409A

Abstract: DSA003782
Contextual Info: ZVN1409A TYPICAL CHARACTERISTICS 70 50 ID-Drain Current mA ID-Drain Current (mA) 40 VGS= 10V 8V 30 6V 20 5V VGS= 10V 60 50 8V 40 6V 30 5V 20 4V 10 3V 10 20 30 40 50 6 8 10 Output Characteristics Saturation Characteristics 50 8 6 4 ID= 24mA 2 18mA 12mA ID-Drain Current (mA)

plessey

Abstract: zvn1409 G146
Contextual Info: PLESSEY SEMICOND/DISCRETE ~^5 DE~| 7520S33 QDG5L37 3 |~~ 7220533 PLESSEY SEMICOND/DISCRETE 95D 05637 T - ^ r - N-channel enhancement mode vertical DMOS FET D ; z r ZVN1409 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •

1rfz44

Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)

Contextual Info: D SbE • ^70576 0D07052 7Tb H Z E T B SEMICONDUCTOR DICE MOSFETs - N-CHANNEL B V 0SS Dice type ZVN0540 Min. ZETEX f'DSIonI Max. at lD V qs SEMICONDUCTORS Max. IDSS at Max. IGSS at 'd m Rated VDS V GS=20V Min. atV0S ^GS th Chip Min. Max. at lD geometry at

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

zvn2110b

Abstract: ZVN3306B
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SM ALL SIGNAL M OSFETS Part number B V 0ss 'dm V G S th| V V mA A Min. Pd ^ D S Io n l at In Max. mA S2 at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50 100 10

DEVICE MARKING ZVN

Abstract: BSS138S 2N7001
Contextual Info: ZETEX SEM ICO NDUCTORS IbE D • ^70576 0Q0bflS4 3 ■ ZETB MOSFETS SPECÌFiCATÌONS — —P N-CHANIMEL SM ALL SIGNAL M OSFETS Part number ZVN0545A* ZVN0545B ZVN0540A* ZVN0540B ZVN2535A ZVN2535B ZVN0535A* ZVN 0124A ZVN0124B ZVN 2120A ZVN2120B BS107P BS107PT

mosfet cross reference

Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
Contextual Info: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G

ZVN2110 P-channel

Abstract: ZVN4106 ZVN2120 ZVN3306 ZVN3320 ZVP2106 ZVP2120 ZVN0124 VN10L ZVN2106
Contextual Info: S EM IC O N D U C TO R DICE MOSFETs - N-CHANNEL Dice type BVqss Min. Max. IDSS at Max. IGSS at ^D S o n Max. at lD V GS Rated VDS V gs = 20V ^Dlon} Chip Max. at lD geometry at Volts Volts Volts mA ^G S (th ) Min. a tV [)S V gs Min. Volts £2 A Volts XA

FERRANTI

Abstract: IRFZ32 VN10LP ZVNO12 IRFZ30 ZVN2106 ZVN2106A IRFZ20 IRFZ22 ZVN0120A
Contextual Info: - 245 /m Ta=25l3 Vds or % Vd g Vg s !l (V) (V) t £J € *± € m Vg s (V) C M A) N N N N N N N N N 200 ± 2 0 200 ± 2 0 240 ± 2 0 240 ± 2 0 240 ± 2 0 350 ± 2 0 N N N N N N N N N 400 400 450 90 60 60 60 100 100 100 200 200 200 60 60 100 5 ±20 ±20

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

zvn1409

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 - MARCH 94_ FEATURES * 90 Volt V,DS Low input capacitance Fast switching ABSOLUTE M A X IM U M RATINGS. SY M B O L Drain-Source Voltage VALUE UNIT V mA mA < o </> PARAMETER 90 Continuous Drain Current

ZVN4210A

Abstract: zvn4310a zxmn10a07f
Contextual Info: 80- 100 Volt MOSFETs A series o f m id -vo ltage M O SFETs containing sm all signal products fo r lo w current sw itching applications and trench M O SFETs. The trench M O SFETs enable m uch h igher current handling capability in the packages on offer. Typical applications include:-

ZVN4306A

Abstract: ZVP4424
Contextual Info: E-LINE MOSFETS TABLE 18 : SMALL SIGNAL MOSFETS This com prehensive range of M OSFET's is optim ised for low on-resistance w hilst m aintaining a fast switching perform ance. Application areas vary from dialler circuits in electronic telephones, autom otive

VN10LP

Abstract: ZVN4206A ZVN0545A ZVN2106A ZVNL110A ZVN0124A ZVN0124B ZVN0535A ZVN0540A ZVN0540B
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SMALL SIGNAL MOSFETS Part number B V DSS 'd *DM V GS th J V mA A Min. at Max. Pd R DS(on> 'd mA fi at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50 100 10 5 TO-39

VN10LP

Abstract: ZVN3306 ZVN3320 ZVN4106 ZVN2106A ZVN4206A ZVN0124A ZVN0124B ZVN0535A ZVN0540A
Contextual Info: SELECTION TABLES TABLE 1: N-CHANNEL SM A L L SIG N A L M O SF ET S Part number B V DSS 'd *DM V GS th J V mA A Min. Pd R DS(on> at ' d mA Max. fi at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50

VN10LP

Abstract: ZVN3306 ZVN3306A ZVN3320A ZVN0545A ZVN3306B ZVN3310 ZVN4206A ZVN0124A ZVN0124B
Contextual Info: SELECTION TABLES T A B LE 1: N-CHAN N EL S M A L L SIG NAL M O SFETS Part number B V DSS 'd *DM V GS th J V mA A Min. Pd R DS(on> at ' d mA Max. fi at lD mA Max. V GS V w Package ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50

ZVN2120

Abstract: 40j2 d1402 zvn2110 die zvn1409
Contextual Info: i ZETEX SEM ICON DUC TORS IbE D' • - ^70578 DOOtflS? 1 ■ Z E T B MOSFETS SPECIFICATIONS ' “T - ^ - O l ELE C TR IC A L PR O BE SPECIFICATIO N S FOR DICE Chip type Part Maximum size No. Rated ^DS(on) a Id V Gs Max lDSS at Max lGSS at rated V DS V QS= 20V

PA 0016 PIONEER

Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete

ZVN3310

Contextual Info: SEMICONDUCTOR DICE MOSFETs - N-CHANNEL b v dss Dice type Min. Max. IDSS at Max. IGSS at ^DS onl Max. at lD V gs Rated V DS VGS=20V Chip Max. at lD geometry at Volts Volts mA ^GSIthl talonl Min. at V DS V Gs Min. Volts S2 A Volts f-A nA A Volts Volts ZVN0540