TN5325 Search Results

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

BX5325

Abstract: FP5325 TM5325 TN5325
Contextual Info: Available as: RF AMPLIFIER MODEL TM5325, 4 Pin TO-8 T4 TN5325, 4 Pin Surface Mount (SM3) FP5325, 4 Pin Flatpack (FP4) BX5325, Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C • ■ ■ Operating Temp. - 55 ºC to +85 ºC

Contextual Info: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 2.0V max. High input impedance and high gain Free from secondary breakdown Low CISS and fast switching speeds This low threshold, enhancement-mode (normally-off)

sot 23 x 316

Abstract: transistor N3 SOT N3 marking code sot 89 mos fet marking k1
Contextual Info: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

sot 23 x 316

Abstract: fet sot-89 marking code P-Channel FET 100v to92
Contextual Info: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN5325

Contextual Info: TN5325 Die Specification Pad Layout 1 2 0,0 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 56 8.0 ± 1.0 Au 1 (mils) TN5325 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

TN5325

Contextual Info: Supertex inc. TN5325 Die Specification Pad Layout 1 2 0,0 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 56 8.0 ± 1.0 Au 1 (mils) TN5325 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

Contextual Info: Supertex inc. TN5325 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► Low threshold 2.0V max. High input impedance and high gain Free from secondary breakdown Low CISS and fast switching speeds Applications

TM5325

Abstract: PN5325 BX5325 FP5325 SM11 TN5325
Contextual Info: RF AMPLIFIER MODEL TM5325 Available as: TM5325, 4 Pin TO-8 T4 TN5325, 4 Pin Surface Mount (SM3) FP5325, 4 Pin Flatpack (FP4) BX5325, Connectorized Housing (H1) PN5325, 4 Pin Surface Mount (SM11) Features Typical Intermodulation Performance at 25 º C ! !

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

TN2524

Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
Contextual Info: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)

pj 72 diode

Abstract: pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 vp1550 pj 85 lv
Contextual Info: Chapter S: Product Selector Guides Chapter Product Selector Guides 1. Hotswap Controller ICs/lnrush Current Limiters/Circuit Breaker IC s. 248 2. LED Driver IC s .

TC8220

Abstract: sot-23 P-Channel MOSFET ultrasound MOSFET SOT-89 SOT-89 TN2524 TN2425 TC1550 TC2320 TC6215
Contextual Info: Selector Guide Ultrasound MOSFETs Ultrasound MOSFETs, Arrays and Drivers Device BVDSS V RDS(ON) (Ω) CISS (typ pF) VGS(TH) (max V) Package Options TN2425 250 3.5 105 0.8 (min) TN2524 240 6.0 65 2.0 3-Lead SOT-89 (N8) TN2640 400 5.0 180 2.0 3-Lead TO-92 (N3)

mosfet cross reference

Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
Contextual Info: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G

diode sot-23 marking AG

Abstract: VF01 sot-23 Marking N2
Contextual Info: TN2130 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) Order Number / Package Product marking for SOT-23: TO-236AB* N1T❋ 300V 25Ω 2.4V TN2130K1 where ❋ = 2-week alpha date code