TP2520 Search Results

Contextual Info: ^ TP2516 TP2520 S j I I r . zj r r jij 'f 1 r I r*, •mimimu . .immilli _ Low T h rash o M P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min)

TA 7139

Abstract: TA 7139 P
Contextual Info: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8 — -220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND * Same as SOT-89. †

TP2520

Contextual Info: TP2520 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2520 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

TP2520

Contextual Info: Supertex inc. TP2520 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2520 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

TP2520

Abstract: TP2520N8 TP2522 TP2522N8 TP2522ND voltage drop circuit from 220V to 10V marking TP5C
Contextual Info: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8 — -220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND * Same as SOT-89. †

Contextual Info: 12E •V D I b3b?aS4 G0ÔÛ2M3 I \ s i f* MOTOROLA MOTOROLA SC XSTRS/R T -3 S F ■ SEMICONDUCTOR TECHNICAL DATA Advance Information TP2520 The RF Line U H F P o w e r T ra n sisto r 20 W — 470 M H z U H F PO W ER T R A N S IS T O R The TP2520 is designed for 12.5 V common-emitter amplifier applications in mobile

TP2520N8-G

Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: TP2520 TP2522 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Informât on BV dss / R d S ON ^GS(th) I d (ON) Order Num ber / Package b v dgs (max) (max) (min) TO-243AA* Diet -200V 12Í2 -2.4V -0.75A TP2520N8 — -220V 12Í2

marking TP5C

Abstract: TP5C TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND
Contextual Info: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8 — -220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND * Same as SOT-89. †

Contextual Info: Supertex inc. TP2520 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown

TA 7139 P

Contextual Info: TP2520 TP2522 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BVdgs Order Number / Package f*DS ON ^G S (th ) ' d (ON) (max) (max) (min) TO-243AA* Die+ -200V 12Q -2.4V -0.75A TP2520N8 TP2520ND -220V 12Q

TO-243AA

Abstract: TN2520N8-G TP2520 tp5cw jedec package TO-243AA
Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling

Contextual Info: ^ TP o TP2516 Supertex inc. 252 Low Thresh old P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ^ G S th b v dqs (max) (max) (min) TO-243AA* DICE+ -160V 12£2 -2.4V -0.75A — TP2516ND -200V 12Î2 -2.4V -0.75A TP2520N8 TP2520ND z ^D S (O N )

TP2520

Abstract: tp5cw TP5C
Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

b0914

Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

voltage drop circuit from 220V to 10V

Abstract: TP2520 TP2520N8 TP2520ND TP2522 TP2522N8
Contextual Info: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8 TP2520ND -220V 12Ω -2.4V -0.75A TP2522N8 — * Same as SOT-89. †

p-channel 200V

Abstract: p-channel DMOS P024 TP2516ND TP2520 TP2520N8 TP2520ND
Contextual Info: TP2516/TP2520 TP2516 TP2520 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* DICE† -160V 12Ω -2.4V -0.75A — TP2516ND -200V 12Ω -2.4V

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

TP0620

Abstract: TP2520ND VF25 6 PIN case mos fet p-channel sitp0
Contextual Info: Supertex inc. TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

LG 42 t

Contextual Info: TP2424 TP2424 Low Threshold Pre-Release Information P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* -240V 8.0Ω -2.4V -800mA TP2424N8 * Same as SOT-89.

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G