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TP5CW Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
TP2522 125pF DSFP-TP2522 B091408 | |
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Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
TP2522 125pF 200pF TP2522 O-243AA OT-89) O-243, DSFP-TP2522 B122707 | |
TP2522ND
Abstract: TP2522 TP2522N8-G
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TP2522 125pF DSFP-TP2522 B022309 TP2522ND TP2522 TP2522N8-G | |
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Contextual Info: Supertex inc. TP2522 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown |
Original |
TP2522 125pF DSFP-TP2522 C081413 | |
A10150
Abstract: TO243AA TP2522 TP2522N8-G TP2522ND A101507
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Original |
TP2522 125pF O-243AA OT-89) O-243, A101507 A10150 TO243AA TP2522 TP2522N8-G TP2522ND A101507 | |
TP2520N8-GContextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
TP2520 125pF 200pF TP2520 O-243AA OT-89) O-243, B122707 TP2520N8-G | |
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Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
Original |
TP2522 125pF DSFP-TP2522 B022309 | |
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Contextual Info: Supertex inc. TP2520 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown |
Original |
TP2520 125pF C081413 | |
TO-243AA
Abstract: TN2520N8-G TP2520 tp5cw jedec package TO-243AA
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Original |
TP2520 125pF O-243AA OT-89) O-243, A101507 TO-243AA TN2520N8-G TP2520 tp5cw jedec package TO-243AA | |
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Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
Original |
TP2520 125pF B022309 | |
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Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
TP2520 125pF 200pF TP2520 O-243AA OT-89) O-243, B122707 | |
TP2520
Abstract: tp5cw TP5C
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Original |
TP2520 125pF B022309 TP2520 tp5cw TP5C | |
b0914Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
TP2520 125pF B091408 b0914 |