SIS472ADN Search Results
SIS472ADN Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SIS472ADN-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 24A POWERPAK1212 | Original | 563.62KB |
SIS472ADN Price and Stock
Vishay Siliconix SIS472ADN-T1-GE3MOSFET N-CH 30V 24A PPAK1212-8 |
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SIS472ADN-T1-GE3 | Digi-Reel | 3,000 | 1 |
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Vishay Intertechnologies SIS472ADN-T1-GE3Trans MOSFET N-CH 30V 24A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS472ADN-T1-GE3) |
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SIS472ADN-T1-GE3 | Reel | 19 Weeks | 3,000 |
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SIS472ADN-T1-GE3 | 5,895 |
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SIS472ADN-T1-GE3 | Reel | 3,000 |
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SIS472ADN-T1-GE3 | Reel | 3,000 |
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SIS472ADN-T1-GE3 | 1 |
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SIS472ADN-T1-GE3 | 20 Weeks | 3,000 |
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Vishay Intertechnologies SIS472ADN-T1-GE3 (TRENCHFET SERIES)Mosfet, N-Ch, 30V, 24A, Powerpak 1212 Rohs Compliant: Yes |Vishay SIS472ADN-T1-GE3 |
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SIS472ADN-T1-GE3 (TRENCHFET SERIES) | Cut Tape | 2,845 | 5 |
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SIS472ADN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiS472ADN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.0085 at VGS = 10 V 24 0.0105 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 12.8 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS • Notebook CPU Core 3.30 mm |
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SiS472ADN SiS472ADN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
62639Contextual Info: SiS472ADN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiS472ADN AN609, 2962u 4146u 8244m 3748m 3513m 5716m 8642m 25-Jun-12 62639 | |
Contextual Info: SiS472ADN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.0085 at VGS = 10 V 24 0.0105 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 12.8 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS • Notebook CPU Core 3.30 mm |
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SiS472ADN SiS472ADN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SiS472ADN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiS472ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiS472ADN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.0085 at VGS = 10 V 24 0.0105 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 12.8 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS • Notebook CPU Core 3.30 mm |
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SiS472ADN SiS472ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |