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SI1489EDH Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI1489EDH-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 2A SOT-363	Original	PDF		12

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Vishay Intertechnologies


Vishay Intertechnologies SI1489EDH-T1-GE3 Trans MOSFET P-CH 8V 2A 6-Pin SC-70 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI1489EDH-T1-GE3		5,710		1	1 $1.13 10 $1.13 100 $0.42 1000 $0.29 10000 $0.29	Buy Now
Quest Components	SI1489EDH-T1-GE3		4,568			1 $1.50 10 $1.50 100 $1.50 1000 $1.50 10000 $0.33	Buy Now
EBV Elektronik	SI1489EDH-T1-GE3			143 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI1489EDH Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SI1489EDH Contextual Info: SPICE Device Model Si1489EDH www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si1489edh 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
SI1489EDH Contextual Info: New Product Si1489EDH Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.048 at VGS = - 4.5 V - 2.0e 0.059 at VGS = - 2.5 V - 2.0e 0.073 at VGS = - 1.8 V - 2.0e 0.097 at VGS = - 1.5 V - 1.5 0.190 at VGS = - 1.2 V - 0.5	Original	si1489edh 2002/95/ec ot-363 sc-70electronic +32011/65/eu js709a 02-oct-12	PDF
marking code BS Abstract: SI1489EDH Contextual Info: New Product Si1489EDH Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.048 at VGS = - 4.5 V - 2.0e 0.059 at VGS = - 2.5 V - 2.0e 0.073 at VGS = - 1.8 V - 2.0e 0.097 at VGS = - 1.5 V - 1.5 0.190 at VGS = - 1.2 V - 0.5	Original	si1489edh 2002/95/ec ot-363 sc-70 +211-mar-11 marking code bs	PDF
Contextual Info: Si1489EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	si1489edh an609 6019u 9400m +56557m 9369u 3654m 1823m 6889m	PDF
SI1489EDH Contextual Info: New Product Si1489EDH Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.048 at VGS = - 4.5 V - 2.0e 0.059 at VGS = - 2.5 V - 2.0e 0.073 at VGS = - 1.8 V - 2.0e 0.097 at VGS = - 1.5 V - 1.5 0.190 at VGS = - 1.2 V - 0.5	Original	si1489edh 2002/95/ec ot-363 2011/65/eu +112-mar-12	PDF
SI1489EDH Abstract: si1489 Contextual Info: New Product Si1489EDH Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.048 at VGS = - 4.5 V - 2.0e 0.059 at VGS = - 2.5 V - 2.0e 0.073 at VGS = - 1.8 V - 2.0e 0.097 at VGS = - 1.5 V - 1.5 0.190 at VGS = - 1.2 V - 0.5	Original	si1489edh 2002/95/ec ot-363 sc-70 +32011/65/eu 12-mar-12 si1489	PDF
SMD resistors 1806 Abstract: SMD zener diode 202 1N4148WS Contextual Info: Cell-phone Table of Contents AUDIO, Audio Control. 3 AUDIO, Earpiece. 5	Original	hpc0201a hpc0402a hpc0402b/c hpc0603a +3smd resistors 1806 smd zener diode 202 1n4148ws	PDF
SI1489EDH Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems	Original	sia920dj sc-70 sib914dk sc-75 +6si1011x si8805edb com/mosfets/12-rated-on-res/com/mosfets/15-rated-on-res/vmn-pt0103-1402 si1489edh	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF
SiB914 Abstract: SiA427DJ si2329ds si8802 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS	Original	sc-70 sc-75 com/mosfets/12-rated-on-res/com/mosfets/15-rated-on-res/+5vmn-pt0103-1209 sib914 sia427dj si2329ds si8802	PDF