PSA56
Contextual Info: TOSHIBA MPSA55,56 Transistor Silicon PNP Epitaxial Type Designed For Use as Medium-Power Driver and Low-Power Outputs Features • High Collector-Emitter Breakdown Voltage - BV c b o = -60Vdc Min. @ lc =-1 .OmAdc M PSA55 -80Vdc (Min.) @ lc = 1 .OmAdc M PSA56
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mpsa55-60vdcpsa55-80vdc+4psa5625vdc100madcpsa05
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transistor 2222a
Contextual Info: SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most
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14-pintpqa06tpqa55tpqa56+6psa55psa562n29072n39042n3906transistor 2222a
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ZTX751
Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.
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ztx455ztx454ztx653ztx753+10ztx453ztx652ztx552ztx452mpsa56mpsa06ztx751ztx651ztx551ztx337
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BC557P
Abstract: BFS60 ZTX304 MPS3645 MPS6566 ZTX551 BC182P BC546P BCY65EP BFS96
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:
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ztx453ztx452ztx4403/2n4401+16\ztx44012n4402ztx4402/2n4400\ztx4400mps2907bc557pbfs60ztx304mps3645mps6566ztx551bc182pbc546pbcy65epbfs96
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ZTX3904
Abstract: BFS98 MPS3645 ZTX237
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:
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BCY56
Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple ment
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2n30532n40372n6962n1131+82n6972n1132bfy51bsy51bsy52bc107bcy56bc177
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BFS98
Abstract: MPS3645 2N3906 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 MPSA06
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:
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ztx453ztx452ztx4403/2n4401+16\ztx44012n4402ztx4402/2n4400\ztx4400mps2907bfs98mps36452n3906bc182pbc546pbcy65epbfs61mps2222ampsa05mpsa06
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TO92A
Abstract: TO-92a MPS4355 MPS6591 MPSD05 MPS9647 MPS9468 MPS3702 MPS3703 MPS3705
Contextual Info: T Y PE NO. P O L A R IT Y Medium Power Amplifiers and Switches M A X IM U M R A T IN G S CASE P d ImtVI •c A H FE V C E (S A T ) V CEO (V ) min m ax 'c (m A) V CE (V) max f T min Cob COM PLE max M ENTARY (MHz) (pF) TYPE 0.05 0.05 0.1 0.1 0.1 100 100
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mps3702o-92amps3704mps3703+10mps3706mps37p4mps3705to92ato-92amps4355mps6591mpsd05mps9647mps9468
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f2n3906
Abstract: ZTX304 BC557P ZTX107 ZTX452 ZTX550 BC182P BC546P BCY65EP BFS61
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - N P N S IL IC O N P L A N A R G E N E R A L PURPO SE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:
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ztx453ztx452mps2222mps3416+15mps3417bc547pztx382bc107pbc237pztx237f2n3906ztx304bc557pztx107ztx550bc182pbc546pbcy65epbfs61
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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BC337B
Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA
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ztx653ztx4532n1893ztx652+9ztx452mpsa06ztx651ztx451bfy502n1613bc337bm 60 n 03 g10bc327c
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111iimz5558z5555z5556+11mz5557powec rm 1110rm 1100 powecmpc1000transistors jx 6822 ainverter welder 4 schematicsaa 14ztransistor si 6822stg 8810pl 15z diodegermanium transistor
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BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products
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bf195 equivalentbf1972n3680bf173+6transistor bf 175bc413bfy39bf256transistor bf194ke4416
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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transistors bc 557cbf366smd code 307cf199 transistor+62n5793bc413motorola zener diode marking code z7equivalent of transistor bc212 bc 214bc107c motorola2n555
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gt116
Abstract: a56 transistor
Contextual Info: Transistors I PNP General Purpose Transistor SSTA56/MMSTA56/PSA56 •Features •External dimensions Units : mm 1 } B V ceo < — 4 0 V (Ic ^ — 1m A) SSTA56 2 ) Com plem ents the SS T A 06/M M S T A 0 6/M PS A 06 . •P a ckag e, marking and packaging specifications
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ssta56/mmsta56/mpsa56ssta56psa56sta56+2gt116a56 transistor
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2n 2222A 3904
Contextual Info: DGG7423 ^ 2 •RHU TO-92 JEDEC Standards Numbers • N P N Transistors General purpose small signal amplifiers B V Ebo Min. ICBO Vbe (sat) Max. Cob Max. fr Min. @ Ic 10pF 160MHz Typ. B V qbo Min. BV ceo Min. 2N 2925 TO-92 (ECB) 25V 25V 5V 100nA 25V 235 470
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dgg7423160mhz100na2n3711+4mps371190mhzmps-a652n 2222a 3904
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bcy78
Abstract: BFS98 2N3906 BC559 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA06
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:
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ztx453ztx45230-15kztx530+15bc559pztx214ztx383bc184pztx384bcy78bfs982n3906bc559bc182pbc546pbcy65epbfs61mps2222ampsa06
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4963N
Abstract: BTA56
Contextual Info: PSA56 MMBTA56 PZTA56 SOT-23 SOT-223 M ark: 2G PNP General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted
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mpsa56mmbta56pzta56ot-23+3ot-2234963nbta56
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2SK2540
Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )
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2sk22622sk2294-220fn2sk2792+142sk2459n2sk2460n0-220fn2sk27132sk27932sk25402sd25762sd2396ta143e2sd 92 mc2n39042sb1569a2sd20612sd1189f
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WIMA TFM
Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN
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rg121juwima tfmbeckman 785-1mkb3+7wima tfm-.1uf-160vbf197diode zener ph c9v12n42862n3642bf197ptransistor 2n2359a
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varactor 36z
Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r
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z1000mz4614mz46271n4099+13m4l3052m4l30561n5158varactor 36zgermaniumhalbleiter index transistorhalbleiter buch2n53472n3054working of reactance modulatorje2955germanium transistor2n3902
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germanium transistor
Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types
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germanium transistor2n51212n54182n5539+32n5637v2205mm8006
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MPSA55
Abstract: MPSA56 MPS-A56 002
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE T> • bb SB TB l D D P Ô O n Elb H A P X MPSA55 PSA56 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar e p ita xia l transistors in plastic TO -92 envelope fo r general purpose applications. Q U IC K R E F E R E N C E D A T A
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2n2646 ujt
Abstract: applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE
Contextual Info: THOflSON/ DISTRIBUTOR SflE D • T0ELiA73 □□□573û ÛTE B i TCSK Discrete Transistors PNP Signal Transistor Selector Guide ■c Max. mA v (BR)CEO (Min.) V 2N 6076 2 N 4126 2N 4125 2N 3905 2N 3906 -1 0 0 -2 0 0 -2 0 0 -2 0 0 -2 0 0 -2 5 -2 5 -3 0 -4 0
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2n6076mps2907a2n4126mps-a55+162n4125mps-a562n3905mps-a932n3906mps-a922n2646 ujtapplications of ujt with circuitsapplications of ujtujt 2n26462n2646 to-92ujt 2n4870ujt 2n2646 oscillatorsof ujt 2n2646ujt transistorujt 2n2646 range
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